IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode V = 600V CES C G I = 60A, T =100C C C G t 5s, T = 175C SC J(max) G E V typ. = 1.65V IC = 48A CE(ON) E C C E G G n-channel Applicaons IRGP4063D1PbF IRGP4063D1EPbF IndustrialMotorDrive G C E Inverters UPS Gate Collector Emitter Welding Features Benefits High efficiency in a wide range of applications and Low V and switching losses CE(ON) switching frequencies Improved reliability due to rugged hard switching Square RBSOA and maximum junction temperature 175C performance and higher power capability Positive V temperature coefficient Excellent current sharing in parallel operation CE (ON) 5s short circuit SOA Enables short circuit protection scheme Lead-free, RoHS compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGP4063D1PbF TO-247AC Tube 25 IRGP4063D1PbF IRGP4063D1-EPbF TO-247AD Tube 25 IRGP4063D1-EPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 100 C C I T = 100C Continuous Collector Current 60 C C I Pulse Collector Current, V = 15V 200 A CM GE I Clamped Inductive Load Current, V = 20V 192 LM GE I T = 25C Diode Continous Forward Current 30 F C I T = 100C Diode Continous Forward Current 15 F C I Diode Maximum Forward Current 120 FM V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 330 W D C P T = 100C Maximum Power Dissipation 170 D C T Operating Junction and -40 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case-(each IGBT) R (IGBT) 0.45 JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 2.4 JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) R 0.24 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA 1 www.irf.com 2013 International Rectifier June 24, 2013 IRGP4063D1PbF/IRGP4063D1-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 100A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 0.3 V/C V =0V, I =1mA (25C-175C) V /T GE C (BR)CES J 1.65 2.14 I = 48A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage V CE(on) 2.05 I = 48A,V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 1.4mA GE(th) CE GE C Threshold Voltage temp. coefficient -21 mV/C V =V , I =1.4mA (25C-175C) V /TJ CE GE C GE(th) gfe Forward Transconductance 32 S V = 50V, I = 48A, PW = 20s CE C 1.0 200 V = 0V, V = 600V GE CE I Collector-to-Emitter Leakage Current A CES 850 V = 0V, V = 600V,T = 175C GE CE J 1.9 2.4 I = 8A F V Diode Forward Voltage Drop V FM 1.2 I = 8A, T = 175C F J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 100 150 I = 48A g C Q Gate-to-Emitter Charge (turn-on) 25 40 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 40 60 V = 400V gc CC E Turn-On Switching Loss 1.4 2.3 on E Turn-Off Switching Loss 1.1 2.0 mJ off I = 48A, V = 400V, V = 15V C CC GE E Total Switching Loss 2.5 4.3 total R = 10 , L = 485H, T = 25C G J t Turn-On delay time 60 80 d(on) Energy losses include tail & diode t Rise time 50 70 ns r reverse recovery t Turn-Off delay time 160 185 d(off) t Fall time 30 50 f E Turn-On Switching Loss 2.0 on E Turn-Off Switching Loss 1.5 mJ off I = 48A, V = 400V, V =15V C CC GE E Total Switching Loss 3.5 total R =10 , L= 485H, T = 175C G J t Turn-On delay time 50 d(on) Energy losses include tail & diode t Rise time 55 ns r reverse recovery t Turn-Off delay time 165 d(off) t Fall time 55 f C Input Capacitance 2900 V = 0V ies GE C Output Capacitance 200 pF V = 30V CC oes C Reverse Transfer Capacitance 90 f = 1.0Mhz res T = 175C, I = 192A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp 600V CC Rg = 50 , V = +20V to 0V GE V = 400V, Vp 600V CC SCSOA Short Circuit Safe Operating Area 5 s Rg = 50 , V = +15V to 0V GE Erec Reverse Recovery Energy of the Diode 245 J T = 175C J t Diode Reverse Recovery Time 80 ns V = 400V, I = 48A CC F rr I Peak Reverse Recovery Current 20 A V = 15V, Rg = 10 , L = 485H rr GE Notes: V = 80% (V ), V = 20V, L = 50H, R = 50 . CC CES GE G R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com 2013 International Rectifier June 24, 2013