IRGP4063PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4063-EPbF Features C Low V Trench IGBT Technology CE (ON) V = 600V CES Low switching losses Maximum Junction temperature 175 C I = 48A, T = 100C C C 5 S short circuit SOA Square RBSOA G t 5s, T = 175C SC J(max) 100% of the parts tested for I LM Positive V Temperature co-efficient CE (ON) E V typ. = 1.65V Tight parameter distribution CE(on) n-channel Lead Free Package Benefits C C High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to Low V and Low Switching losses CE (ON) Rugged transient Performance for increased reliability E E C C G G Excellent Current sharing in parallel operation TO-247AC TO-247AD Low EMI IRGP4063PbF IRGP4063-EPbF G C E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 96 C C I T = 100C Continuous Collector Current 48 C C I Pulse Collector Current, V = 15V 144 A CM GE I Clamped Inductive Load Current, V = 20V 192 A LM GE V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 330 W D C P T = 100C Maximum Power Dissipation 170 D C T Operating Junction and -55 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.45 C/W JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA 1 www.irf.com 06/30/09IRGP4063PbF/IRGP4063-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Ref.Fig Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage V = 0V, I = 150A CT6 600 V (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.30 V/C V = 0V, I = 1mA (25C-175C) CT6 (BR)CES J GE C 1.65 2.14 I = 48A, V = 15V, T = 25C 5,6,7 C GE J V I = 48A, V = 15V, T = 150C Collector-to-Emitter Saturation Voltage 2.0 V 8,9,10 CE(on) C GE J 2.05 I = 48A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 1.4mA 8,9 GE(th) CE GE C V /TJ V = V , I = 1.0mA (25C - 175C) GE(th) Threshold Voltage temp. coefficient -21 mV/C 10,11 CE GE C gfe Forward Transconductance 32 S V = 50V, I = 48A, PW = 80s CE C I Collector-to-Emitter Leakage Current 1.0 150 A V = 0V, V = 600V CES GE CE = 0V, V = 600V, T = 175C 450 1000 V GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Ref.Fig Parameter Min. Typ. Max. Units Conditions Q I = 48A 18 Total Gate Charge (turn-on) 95 140 g C Q Gate-to-Emitter Charge (turn-on) 28 42 nC V = 15V CT1 ge GE Q Gate-to-Collector Charge (turn-on) 35 53 V = 400V gc CC E I = 48A, V = 400V, V = 15V CT4 Turn-On Switching Loss 625 1141 on C CC GE E Turn-Off Switching Loss 1275 1481 J R =10, L= 200 H, L =150nH, T = 25C off G S J E Total Switching Loss 1900 2622 Energy losses include tail & diode reverse recovery total t I = 48A, V = 400V, V = 15V Turn-On delay time 60 78 CT4 d(on) C CC GE t Rise time 40 56 ns R = 10, L = 200H, L = 150nH, T = 25C r G S J t d(off) Turn-Off delay time 145 176 t Fall time 35 46 f E Turn-On Switching Loss 1625 I = 48A, V = 400V, V =15V 12, 14 on C CC GE E Turn-Off Switching Loss 1585 J R =10, L=200H, L =150nH, T = 175C CT4 off G S J E Total Switching Loss 3210 Energy losses include tail & diode reverse recovery WF1, WF2 total t Turn-On delay time 55 I = 48A, V = 400V, V = 15V 13, 15 d(on) C CC GE t R = 10, L = 200H, L = 150nH CT4 Rise time 45 ns r G S t Turn-Off delay time 165 T = 175C WF1 d(off) J t Fall time 45 WF2 f C V = 0V 17 Input Capacitance 3025 pF ies GE C Output Capacitance 245 V = 30V oes CC C Reverse Transfer Capacitance 90 f = 1.0Mhz res T = 175C, I = 192A 4 J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp =600V CT2 CC Rg = 10, V = +15V to 0V GE SCSOA Short Circuit Safe Operating Area 5 s V = 400V, Vp =600V 16, CT3 CC Rg = 10, V = +15V to 0V WF3 GE Notes: V = 80% (V ), V = 20V, L = 200H, R = 10. CC CES GE G This is only applied to TO-247AC package. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Turn-on energy is measured using the same co-pak diode as IRGP4063DPbF. Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 80A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 2 www.irf.com