IRGP4068DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRGP4068D-EPbF Features Low V Trench IGBT Technology C CE (ON) V = 600V CES Low Switching Losses Maximum Junction temperature 175 C I = 48A, T = 100C C C 5 S short circuit SOA Square RBSOA G t 5s, T = 175C SC J(max) 100% of the parts tested for I LM Positive V Temperature co-efficient CE (ON) E V typ. = 1.65V Ultra-low V Hyperfast Diode CE(on) F n-channel Tight parameter distribution Lead Free Package Benefits C C Device optimized for induction heating and soft switching applications High Efficiency due to Low V , Low Switching Losses CE(on) and Ultra-low V F Rugged transient Performance for increased reliability E E C C G G Excellent Current sharing in parallel operation Low EMI TO-247AC TO-247AD IRGP4068DPbF IRGP4068D-EPbF G C E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 96 C C I T = 100C Continuous Collector Current 48 C C I Pulse Collector Current, V = 15V 144 CM GE I Clamped Inductive Load Current, V = 20V 192 A LM GE Diode Continous Forward Current I T = 160C 8.0 F C I Diode Non Repetitive Peak Surge Current T = 25C 175 FSM J I Tc = 100C Diode Repetitive Peak Forward Current at tp=10s 100 FRM Continuous Gate-to-Emitter Voltage 20 V V GE Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 330 W D C P T = 100C Maximum Power Dissipation 170 D C T Operating Junction and -55 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.45 C/W JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 2.0 JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA 1 www.irf.com 07/27/09IRGP4068DPbF/IRGP4068D-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 100 A CT6 (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.30 V/C V = 0V, I = 1mA (25C-175C) CT6 (BR)CES J GE C I = 48A, V = 15V, T = 25C 1.65 2.14 4,5,6 C GE J V Collector-to-Emitter Saturation Voltage 2.0 V I = 48A, V = 15V, T = 150C 8,9,10 CE(on) C GE J 2.05 I = 48A, V = 15V, T = 175C C GE J V V = V , I = 1.4mA Gate Threshold Voltage 4.0 6.5 V 8,9,10,11,20 GE(th) CE GE C gfe Forward Transconductance 32 S V = 50V, I = 48A, PW = 80 s CE C I Collector-to-Emitter Leakage Current 1.0 150 A V = 0V, V = 600V CES GE CE V = 0V, V = 600V, T = 175C 450 1000 GE CE J V Diode Forward Voltage Drop 0.96 1.05 V I = 8.0A 7 FM F I = 8.0A, T = 150C 0.81 0.86 F J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Ref.Fig Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 95 140 I = 48A 18 g C Q V = 15V Gate-to-Emitter Charge (turn-on) 28 42 nC CT1 ge GE Q Gate-to-Collector Charge (turn-on) 35 53 V = 400V gc CC I = 48A, V = 400V, V = 15V C CC GE E Turn-Off Switching Loss 1275 1481 J R = 10 , L = 200 H,T = 25C CT4 off G J Energy losses include tail t Turn-Off delay time 145 176 ns I = 48A, V = 400V, V = 15V d(off) C CC GE = 10, L = 200 H,T = 25C t Fall time 35 46 R f G J I = 48A, V = 400V, V = 15V C CC GE E R = 10, L = 200 H,T = 175C CT4 Turn-Off Switching Loss 1585 J off G J Energy losses include tail t Turn-Off delay time 165 ns I = 48A, V = 400V, V = 15V WF1 d(off) C CC GE t R =10, L=200 H, T = 175C Fall time 45 f G J C Input Capacitance 3025 V = 0V 17 ies GE C Output Capacitance 245 pF V = 30V oes CC C Reverse Transfer Capacitance 90 f = 1.0Mhz res T = 175C, I = 192A 3 J C V = 480V, Vp =600V CT2 RBSOA Reverse Bias Safe Operating Area FULL SQUARE CC Rg = 10 , V = +20V to 0V GE SCSOA Short Circuit Safe Operating Area 5 s V = 400V, Vp =600V 16, CT3 CC Rg = 10, V = +15V to 0V GE WF2 Notes: V = 80% (V ), V = 20V, L = 200H, R = 10. CC CES GE G Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES fsw = 20KHz, refer to figure 19. Sinusoidal half wave, t=10ms. 2 www.irf.com