IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4069D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C Low V Trench IGBT Technology CE (ON) V = 600V CES Low Switching Losses Maximum Junction Temperature 175 C I = 35A C(Nominal) 5 S short circuit SOA Square RBSOA G t 5s, T = 175C SC J(max) 100% of The Parts Tested for I LM Positive V Temperature Coefficient CE (ON) E V typ. = 1.6V CE(on) Tight Parameter Distribution n-channel Lead Free Package C C Benefits High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due to Low V and Low Switching Losses CE (ON) E E C C Rugged Transient Performance for Increased Reliability G G Excellent Current Sharing in Parallel Operation TO-247AC TO-247AD IRGP4069DPbF IRGP4069D-EPbF G C E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 76 C C I T = 100C Continuous Collector Current 50 C C I NOMINAL Nominal Current 35 I Pulse Collector Current, V = 15V 105 A CM GE I Clamped Inductive Load Current, V = 20V 140 LM GE I T = 25C Diode Continous Forward Current 76 F C I T = 100C Diode Continous Forward Current 50 F C Diode Maximum Forward Current I 140 FM V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 268 W D C P T = 100C Maximum Power Dissipation 134 D C T Operating Junction and -55 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.56 C/W JC Thermal Resistance Junction-to-Case-(each Diode) R (Diode) 1.0 JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA 1 www.irf.com 10/2/09IRGP4069DPbF/IRGP4069D-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage V = 0V, I = 100A 600 V (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 1.3 mV/C V = 0V, I = 1mA (25C-175C) (BR)CES J GE C 1.6 1.85 I = 35A, V = 15V, T = 25C C GE J V I = 35A, V = 15V, T = 150C Collector-to-Emitter Saturation Voltage 1.9 V CE(on) C GE J 2.0 I = 35A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 1.0mA GE(th) CE GE C V /TJ V = V , I = 1.0mA (25C - 175C) Threshold Voltage temp. coefficient -18 mV/C GE(th) CE GE C gfe Forward Transconductance 25 S V = 50V, I = 35A, PW = 60s CE C I V = 0V, V = 600V Collector-to-Emitter Leakage Current 1.0 70 A CES GE CE 770 V = 0V, V = 600V, T = 175C GE CE J V Diode Forward Voltage Drop 2.2 3.8 V I = 35A FM F I = 35A, T = 175C 1.4 F J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 69 104 I = 35A g C = 15V Q Gate-to-Emitter Charge (turn-on) 18 27 nC V ge GE Q Gate-to-Collector Charge (turn-on) 29 44 V = 400V gc CC E I = 35A, V = 400V, V = 15V Turn-On Switching Loss 390 508 on C CC GE E Turn-Off Switching Loss 632 753 J R = 10 , L = 200H, L = 150nH, T = 25C off G S J E Total Switching Loss 1022 1261 Energy losses include tail & diode reverse recovery total t I = 35A, V = 400V, V = 15V Turn-On delay time 46 56 d(on) C CC GE t Rise time 33 42 ns R = 10, L = 200H, L = 150nH, T = 25C r G S J t Turn-Off delay time 105 117 d(off) t Fall time 44 54 f E Turn-On Switching Loss 1013 I = 35A, V = 400V, V =15V on C CC GE E R =10, L=200H, L =150nH, T = 175C Turn-Off Switching Loss 929 J off G S J E Total Switching Loss 1942 Energy losses include tail & diode reverse recovery total t Turn-On delay time 43 I = 35A, V = 400V, V = 15V d(on) C CC GE t R = 10, L = 200H, L = 150nH r Rise time 35 ns G S t Turn-Off delay time 127 T = 175C d(off) J t Fall time 61 f C V = 0V Input Capacitance 2113 pF ies GE C Output Capacitance 197 V = 30V oes CC C Reverse Transfer Capacitance 65 f = 1.0Mhz res T = 175C, I = 140A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp =600V CC Rg = 10, V = +20V to 0V GE V = 400V, Vp =600V SCSOA Short Circuit Safe Operating Area 5 s CC Rg = 10, V = +15V to 0V GE T = 175C Erec Reverse Recovery Energy of the Diode 304 J J t Diode Reverse Recovery Time 120 ns V = 400V, I = 35A rr CC F I Peak Reverse Recovery Current 25 A V = 15V, Rg = 10, L =210H, L = 150nH rr GE s Notes: V = 80% (V ), V = 20V, L = 19H, R = 10. CC CES GE G Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at T of approximately 90C. J 2 www.irf.com