IRGP4072DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V Trench IGBT Technology CE (ON) C Low switching losses Maximum Junction temperature 150 C V = 300V CES Square RBSOA I = 40A, T = 100C 100% of the parts tested for clamped inductive load C C Ultra fast soft Recovery Co-Pak Diode G Tight parameter distribution V typ. = 1.46V CE(on) Lead Free Package E n-channel Benefits High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to Low V and Low Switching losses CE (ON) C Rugged transient Performance for increased reliability Low EMI E C G Applications Uninterruptible Power Supplies Battery operated vehicles TO-247AC Welding Solar converters and inverters GC E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 300 V CES I T = 25C Continuous Collector Current 70 C C Continuous Collector Current 40 I T = 100C C C I Pulse Collector Current 120 CM Clamped Inductive Load Current I 120 A LM Diode Continous Forward Current 70 I T = 25C F C I T = 100C Diode Continous Forward Current 40 F C I Diode Maximum Forward Current 120 FM V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate-to-Emitter Voltage 30 Maximum Power Dissipation 180 W P T = 25C D C P T = 100C Maximum Power Dissipation 71 D C T Operating Junction and -55 to +150 J Storage Temperature Range C T STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.70 C/W JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 0.87 JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 80 JA 1 www.irf.com 04/16/08IRGP4072DPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig V Collector-to-Emitter Breakdown Voltage 300 V V = 0V, I = 1.0mA (BR)CES GE C V / T Temperature Coeff. of Breakdown Voltage 0.20 V/C V = 0V, I = 1mA (25C-150C) (BR)CES J GE C V I = 40A, V = 15V, T = 25C Collector-to-Emitter Saturation Voltage 1.46 1.70 V 5,6,7 CE(on) C GE J 1.59 I = 40A, V = 15V, T = 150C 9,10,11 C GE J V V = V , I = 500A 9, 10, Gate Threshold Voltage 2.6 5.0 V GE(th) CE GE C V / TJ Threshold Voltage temp. coefficient -13 mV/C V = V , I = 1.0mA (25C - 150C) 11, 12 GE(th) CE GE C gfe Forward Transconductance 28 S V = 25V, I = 40A CE C I V = 0V, V = 300V Collector-to-Emitter Leakage Current 1.0 25 A CES GE CE 450 V = 0V, V = 300V, T = 150C GE CE J V Diode Forward Voltage Drop 2.26 2.69 V I = 40A 8 FM F I = 40A, T = 150C 1.53 F J I Gate-to-Emitter Leakage Current 100 nA V = 30V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Ref.Fig Parameter Min. Typ. Max. Units Conditions Q I = 40A 23 g Total Gate Charge (turn-on) 73 110 C Q Gate-to-Emitter Charge (turn-on) 13 20 nC V = 15V CT1 ge GE Q Gate-to-Collector Charge (turn-on) 26 39 V = 240V gc CC E I = 40A, V = 240V, V = 15V CT3 Turn-On Switching Loss 409 525 on C CC GE E Turn-Off Switching Loss 838 1017 J R = 10 , L = 200H, T = 25C off G J E Total Switching Loss 1247 1542 Energy losses include tail & diode reverse recovery total t I = 40A, V = 240V, V = 15V CT3 Turn-On delay time 18 23 d(on) C CC GE t Rise time 36 50 ns R = 10 , L = 200H, T = 25C r G J t Turn-Off delay time 144 121 d(off) t Fall time 95 124 f E Turn-On Switching Loss 713 I = 40A, V = 240V, V =15V 13, 15 on C CC GE E R =10 , L=200H, T = 150C CT3 Turn-Off Switching Loss 1076 J off G J E Total Switching Loss 1789 Energy losses include tail & diode reverse recovery WF1, WF2 total t Turn-On delay time 16 I = 40A, V = 240V, V = 15V 14, 16 d(on) C CC GE t R = 10 , L = 200H CT3 Rise time 39 ns r G t Turn-Off delay time 176 T = 150C WF1 d(off) J t Fall time 133 WF2 f C V = 0V Input Capacitance 2265 pF 22 ies GE C Output Capacitance 190 V = 30V oes CC C Reverse Transfer Capacitance 58 f = 1.0Mhz res = 150C, I = 120A 4 T J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 240V, Vp =300V CT2 CC Rg = 10 , V = +15V to 0V GE T = 150C Erec Reverse Recovery Energy of the Diode 909 J 17, 18, 19 J t Diode Reverse Recovery Time 122 ns V = 240V, I = 40A 20, 21 rr CC F I V = 15V, Rg = 10 , L =200H, L = 150nH WF3 Peak Reverse Recovery Current 36 A rr GE s Notes: V = 80% (V ), V = 15V, L = 200H, R = 10 . CC CES GE G This is only applied to TO-247AC package. Pulse width limited by max. junction temperature. 2 www.irf.com