IRGP4086PbF Key Parameters Features V min 300 V Advanced Trench IGBT Technology CE Optimized for Sustain and Energy Recovery V typ. I = 70A 1.90 V CE(ON) C Circuits in PDP Applications I max T = 25C A 250 RP C TM Low V and Energy per Pulse (E ) CE(on) PULSE T max 150 C J for Improved Panel Efficiency High Repetitive Peak Current Capability C Lead Free Package C E G C G E TO-247AC n-channel GC E Gate Collector Em itter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced TM trench IGBT technology to achieve low V and low E rating per silicon area which improve panel CE(on) PULSE efficiency. Additional features are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Max. Parameter Units V Gate-to-Emitter Voltage 30 V GE I T = 25C Continuous Collector Current, V 15V 70 A C C GE I T = 100C Continuous Collector, V 15V 40 C C GE I T = 25C 250 Repetitive Peak Current RP C P T = 25C 160 Power Dissipation W D C P T = 100C 63 Power Dissipation D C 1.3 Linear Derating Factor W/C T -40 to + 150 Operating Junction and C J T Storage Temperature Range STG 300 Soldering Temperature for 10 seconds 10lb in (1.1N m) Mounting Torque, 6-32 or M3 Screw N Thermal Resistance Parameter Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.8 JC R Case-to-Sink (flat, greased surface) 0.24 C/W CS R JA Junction-to-Ambient (typical socket mount) 40 Weight 6.0 (0.21) g (oz) www.irf.com 1 4/17/08 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 1 mA BV Collector-to-Emitter Breakdown Voltag 300 V GE CE CES Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 0.29 V/C CE CES J V = 15V, I = 25A 1.29 1.46 GE CE V = 15V, I = 40A 1.49 1.67 GE CE V V = 15V, I = 70A Static Collector-to-Emitter Voltage 1.90 2.10 V CE(on) GE CE V = 15V, I = 120A 2.57 2.96 GE CE V = 15V, I = 70A, T = 150C 2.27 GE CE J V V = V , I = 500 A Gate Threshold Voltage 2.6 5.0 V GE(th) CE GE CE V /T Gate Threshold Voltage Coefficient -11 mV/C GE(th) J I V = 300V, V = 0V Collector-to-Emitter Leakage Current 2.0 25 A CE GE CES V = 300V, V = 0V, T = 100C 5.0 CE GE J V = 300V, V = 0V, T = 150C 100 CE GE J I Gate-to-Emitter Forward Leakage 100 nA V = 30V GE GES V = -30V Gate-to-Emitter Reverse Leakage -100 GE V = 25V, I = 25A g Forward Transconductance 29 S CE CE fe V = 200V, I = 25A, V = 15V Q Total Gate Charge 65 nC g CE C GE Q Gate-to-Collector Charge 22 gc t Turn-On delay time 36 I = 25A, V = 196V d(on) C CC t Rise time 31 ns R = 10, L=200 H, L = 200nH r G S t T = 25C Turn-Off delay time 112 d(off) J t Fall time 65 f t I = 25A, V = 196V Turn-On delay time 30 d(on) C CC t R = 10, L=200 H, L = 200nH Rise time 33 ns r G S t Turn-Off delay time 145 T = 150C d(off) J t Fall time 98 f t Shoot Through Blocking Time 100 ns V = 240V, V = 15V, R = 5.1 st CC GE G L = 220nH, C= 0.40 F, V = 15V GE 1075 E Energy per Pulse J V = 240V, R = 5.1, T = 25C PULSE CC G J L = 220nH, C= 0.40 F, V = 15V GE 1432 V = 240V, R = 5.1, T = 100C CC G J V = 0V C Input Capacitance 2250 iss GE C V = 30V Output Capacitance 110 pF oss CE C = 1.0MHz, See Fig.13 Reverse Transfer Capacitance 58 rss L Internal Collector Inductance 5.0 Between lead, C nH 6mm (0.25in.) L Internal Emitter Inductance 13 from package E and center of die contact Pulse width 400s duty cycle 2%. Half sine wave with duty cycle = 0.1, ton=2 sec. R is measured at 2 www.irf.com