IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor C V = 650V CES I = 60A, T =100C C C E E G t 5.5s, T = 175C C SC J(max) C G G V typ. = 1.7V IC = 48A CE(ON) E IRGP4263PbF IRGP4263-EPbF n-channel TO247AC TO-247AD Applications G C E Industrial Motor Drive Gate Collector Emitter Inverters UPS Welding Features Benefits High efficiency in a wide range of applications and Low V and switching losses CE(ON) switching frequencies Improved reliability due to rugged hard switching Square RBSOA and maximum junction temperature 175C performance and higher power capability Positive V temperature coefficient Excellent current sharing in parallel operation CE (ON) 5.5s short circuit SOA Enables short circuit protection scheme Lead-free, RoHS compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRG7P4263PbF TO-247AC Tube 25 IRGP4263PbF IRG7P4263-EPbF TO-247AD Tube 25 IRGP4263-EPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 650 V CES T = 25C I Continuous Collector Current 90 C C I T = 100C Continuous Collector Current 60 C C A I Pulse Collector Current, V=20V 192 CM GE I Clamped Inductive Load Current, V =20V 192 LM GE V Continuous Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 300 D C W P T = 100C Maximum Power Dissipation 150 D C T Operating Junction and -40 to +175 J T Storage Temperature Range STG C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case-(each IGBT) 0.5 R (IGBT) JC Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R C/W CS Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 R JA 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback August 21, 2014 IRGP4263PbF/IRGP4263-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 650 V V = 0V, I = 100A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 505 mV/C V = 0V, I = 1mA (25C-175C) V / (BR)CES GE C = 48A, V = 15V, T = 25C 1.7 2.1 V I C GE J V Collector-to-Emitter Saturation Voltage CE(on) 2.1 I = 48A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 5.5 7.7 V V = V , I = 1.4mA GE(th) CE GE C Threshold Voltage Temperature Coeff. -23 mV/C V = V , I = 1.4mA (25C-175C) V /T GE(th) J CE GE C gfe Forward Transconductance 31 S V = 50V, I = 48A, PW = 20s CE C 1.0 25 A V = 0V, V = 650V GE CE I Collector-to-Emitter Leakage Current CES 700 V = 0V, V = 650V, T = 175C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max Units Conditions Q Total Gate Charge (turn-on) 100 150 I = 48A g C Q Gate-to-Emitter Charge (turn-on) 30 50 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 40 60 V = 600V gc CC E Turn-On Switching Loss 1.7 2.6 on E Turn-Off Switching Loss 1.0 1.9 mJ off I = 48A, V = 400V, V =15V C CC GE E Total Switching Loss 2.7 4.5 total R = 10 , L = 210H, T = 25C G J t Turn-On delay time 70 90 d(on) Energy losses include tail & diode t Rise time 60 80 r ns reverse recovery t Turn-Off delay time 140 160 d(off) t Fall time 30 50 f E Turn-On Switching Loss 2.9 on E Turn-Off Switching Loss 1.4 off mJ I = 48A, V = 400V, V =15V C CC GE E Total Switching Loss 4.3 total R = 10 , L = 210H, T = 175C G J t Turn-On delay time 55 d(on) Energy losses include tail & diode t Rise time 60 r reverse recovery ns t Turn-Off delay time 145 d(off) t Fall time 65 f C Input Capacitance 3000 V = 0V ies GE C Output Capacitance 150 pF V = 30V oes CC f = 1.0Mhz C Reverse Transfer Capacitance 80 res T = 175C, I = 192A J C FULL SQUARE V = 520V, Vp 650V RBSOA Reverse Bias Safe Operating Area CC Rg = 10 , V = +20V to 0V GE T = 150C,V = 400V, Vp 650V J CC SCSOA Short Circuit Safe Operating Area 5.5 s Rg = 10 , V = +15V to 0V GE Notes: V = 80% (V ), V = 20V, L = 50H, R = 10 . CC CES GE G R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback August 21, 2014