IRGP4266DPbF IRGP4266D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode V = 650V CES C I = 90A, T =100C C C t 5.5s, T = 175C SC J(max) G E E C C G G V typ. = 1.7V IC = 75A CE(ON) E IRGP4266DPbF IRGP4266D-EPbF n-channel Applications TO-247AC TO-247AD Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Low V and Switching Losses High Efficiency in a Wide Range of Applications CE(ON) 5.5s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 175C Increased Reliability Positive V Temperature Co-efficient Excellent Current Sharing in Parallel Operation CE (ON) Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGP4266DPbF TO-247AC Tube 25 IRGP4266DPbF IRGP4266D-EPbF TO-247AD Tube 25 IRGP4266D-EPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 650 V CES I T = 25C Continuous Collector Current 140 C C I T = 100C Continuous Collector Current 90 C C A I Pulse Collector Current, V=20V 300 CM GE I Clamped Inductive Load Current, V =20V 300 LM GE I T = 25C Diode Continuous Forward Current 68 F C I T = 100C Diode Continuous Forward Current 42 F C V Continuous Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 455 D C W P T = 100C Maximum Power Dissipation 230 D C T Operating Junction and -40 to +175 J T Storage Temperature Range STG C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case-(each IGBT) 0.33 R (IGBT) JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 1.1 JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA 1 2017-12-18 IRGP4266DPbF/IRGP4266D-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 650 V V = 0V, I = 100A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 0.65 V/C V = 0V, I = 5.0mA (25C-175C) V /T GE C (BR)CES J 1.7 2.1 V I = 75A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage CE(on) 2.2 I = 75A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 5.5 7.7 V V = V , I = 2.1mA GE(th) CE GE C V /T Threshold Voltage Temperature Coeff. -20 mV/C V = V , I = 2.1mA (25C-150C) CE GE C GE(th) J gfe Forward Transconductance 47 S V = 50V, I = 75A, PW = 20s CE C 1.0 35 A V = 0V, V = 650V GE CE I Collector-to-Emitter Leakage Current CES 1.0 mA V = 0V, V = 650V, T = 175C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE 2.1 2.7 V I = 75A F V Diode Forward Voltage Drop F 1.7 I = 75A, T = 175C F J Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max Units Conditions Q Total Gate Charge (turn-on) 140 210 I = 75A g C Q Gate-to-Emitter Charge (turn-on) 50 80 nC V = 15V GE ge Q Gate-to-Collector Charge (turn-on) 60 90 V = 400V gc CC E Turn-On Switching Loss 2.5 3.4 on E Turn-Off Switching Loss 2.2 3.0 mJ off I = 75A, V = 400V, V =15V C CC GE E Total Switching Loss 4.7 6.4 total R = 10 , L = 200H, T = 25C G J t Turn-On delay time 50 70 d(on) Energy losses include tail & diode t Rise time 70 90 r ns reverse recovery t Turn-Off delay time 200 225 d(off) t Fall time 60 80 f E Turn-On Switching Loss 3.9 on E Turn-Off Switching Loss 2.8 off mJ I = 75A, V = 400V, V =15V C CC GE E Total Switching Loss 6.7 total R = 10 , L = 200H, T = 175C G J t Turn-On delay time 50 d(on) Energy losses include tail & diode t Rise time 70 r ns reverse recovery t Turn-Off delay time 240 d(off) t Fall time 70 f C Input Capacitance 4430 V = 0V ies GE pF V = 30V C Output Capacitance 310 oes CC C Reverse Transfer Capacitance 130 f = 1.0MHz res T = 175C, I = 225A J C FULL SQUARE V = 480V, Vp 650V RBSOA Reverse Bias Safe Operating Area CC = 50 , V = +20V to 0V R g GE T = 150C,V = 400V, Vp 650V J CC SCSOA Short Circuit Safe Operating Area 5.5 s R = 50 , V = +15V to 0V g GE T = 175C Erec Reverse Recovery Energy of the Diode 770 J J V = 400V, I = 75A t Diode Reverse Recovery Time 170 ns CC F rr V = 15V, Rg = 10 I Peak Reverse Recovery Current 27 A rr GE Notes: V = 80% (V ), V = 20V. CC CES GE R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 2017-12-18