X-On Electronics has gained recognition as a prominent supplier of IRGP4640-EPBF IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IRGP4640-EPBF IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IRGP4640-EPBF Infineon

IRGP4640-EPBF electronic component of Infineon
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Part No.IRGP4640-EPBF
Manufacturer: Infineon
Category: IGBT Transistors
Description: Trans IGBT Chip N-CH 600V 65A 3-Pin(3+Tab) TO-247AD Tube
Datasheet: IRGP4640-EPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0548 ea
Line Total: USD 1.05 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0548
10 : USD 0.9924

0
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 11
Multiples : 1
11 : USD 3.4268
25 : USD 3.3854
50 : USD 3.3452
100 : USD 3.0499

   
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We are delighted to provide the IRGP4640-EPBF from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRGP4640-EPBF and other electronic components in the IGBT Transistors category and beyond.

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V = 600V CES C C C I = 40A, T = 100C C C t 5s, T = 175C SC J(max) G E E C C G E G V typ. = 1.60V I = 24A CE(on) C n-channel TO-247AC TO-247AD IRGP4640PbF IRGP4640-EP GC E Gate Collector Emitter Applications Inverters UPS Welding Features Benefits High efficiency in a wide range of applications and switching Low V and Switching Losses CE(ON) frequencies Improved reliability due to rugged hard switching performance Square RBSOA and Maximum Junction Temperature 175C and higher power capability Positive V Temperature Coefficient Excellent current sharing in parallel operation CE (ON) 5s short circuit SOA Enables short circuit protection scheme Lead-Free, RoHS compliant Environmentally friendly Standard Pack Base part number Package Type Orderable part number Form Quantity IRGP4640PbF TO-247AC Tube 25 IRGP4640PbF IRGP4640-EPbF TO-247AD Tube 25 IRGP4640-EPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 65 C C I T = 100C Continuous Collector Current 40 C C I Pulse Collector Current, V = 15V 72 CM GE I Clamped Inductive Load Current, V = 20V 96 A LM GE V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 250 W D C P T = 100C Maximum Power Dissipation 125 D C T Operating Junction and -40 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R Junction-to-Case 0.60 C/W JC R Case-to-Sink (flat, greased surface) 0.24 CS R Junction-to-Ambient (typical socket mount) 40 JA Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 100A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.30 V/C V = 0V, I = 1mA (25C-175C) (BR)CES J GE C V Collector-to-Emitter Saturation Voltage 1.60 1.90 I = 24A, V = 15V, T = 25C CE(on) C GE J V 2.00 I = 24A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 700A GE(th) CE GE C V /TJ Threshold Voltage temp. coefficient -18 mV/C V = V , I = 1.0mA (25C - 175C) GE(t h) CE GE C gfe Forward Transconductance 17 S V = 50V, I = 24A, PW = 80s CE C I Collector-to-Emitter Leakage Current 1.0 20 A V = 0V, V = 600V CES GE CE 600 V = 0V, V = 600V, T = 175C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 50 75 I = 24A g C Q Gate-to-Emitter Charge (turn-on) 15 20 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 20 30 V = 400V gc CC E Turn-On Switching Loss 0.1 0.2 on E Turn-Off Switching Loss 0.6 0.7 mJ off E Total Switching Loss 0.7 0.9 I = 24A, V = 400V, V = 15V total C CC GE t Turn-On delay time 40 55 R = 10, T = 25C d(on) G J Energy los s es include tail & diode revers e recovery t Rise time 2030ns r t Turn-Off delay time 105 115 d(off) t Fall time 30 40 f E Turn-On Switching Loss 0.4 on E Turn-Off Switching Loss 0.85 mJ off E Total Switching Loss 1.25 I = 24A, V = 400V, V =15V total C CC GE t Turn-On delay time 40 R =10, T = 175C d(on) G J t Rise time 25 ns Energy los s es include tail & diode revers e recovery r t Turn-Off delay time 125 d(off) t Fall time 40 f C Input Capacitance 1490 pF V = 0V ies GE C Output Capacitance 130 V = 30V oes CC C Reverse Transfer Capacitance 45 f = 1.0Mhz res T = 175C, I = 96A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp =600V CC Rg = 10, V = +20V to 0V GE SCSOA Short Circuit Safe Operating Area 5 s V = 400V, Vp =600V CC Rg = 10, V = +15V to 0V GE Notes: Pulse width limited by max. junction temperature. V = 80% (V ), V = 20V, L = 100H, R = 10. CC CES GE G R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Maximum limits are based on statistical sample size characterization. Values are influenced by parasitic L and C in measurement.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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