V = 600V CES C C C I = 50A, T = 100C C C t 5s, T = 175C SC J(max) G E E C C G G V typ. = 1.60V I = 35A CE(on) C E TO-247AC TO-247AD n-channel IRGP4650DPbF IRGP4650D-EP Applications GC E Industrial Motor Drive Gate Collector Emitter Inverters UPS Welding Features Benefits High efficiency in a wide range of applications and switching Low V and Switching Losses CE(ON) frequencies Improved reliability due to rugged hard switching performance Square RBSOA and Maximum Junction Temperature 175C and higher power capability Positive V Temperature Coefficient Excellent current sharing in parallel operation CE (ON) 5s short circuit SOA Enables short circuit protection scheme Lead-Free, RoHS compliant Environmentally friendly Standard Pack Base part number Package Type Orderable part number Form Quantity IRGP4650DPbF TO-247AC Tube 25 IRGP4650DPbF IRGP4650D-EPbF TO-247AD Tube 25 IRGP4650D-EPbF Absolute Maximum Ratings Parameter Max. Units Collector-to-Emitter Voltage 600 V VCES I T = 25C Continuous Collector Current 76 C C I T = 100C Continuous Collector Current 50 C C Pulse Collector Current, V = 15V I 105 A CM GE Clamped Inductive Load Current, V = 20V ILM GE 140 Diode Continous Forward Current 76 IF TC = 25C I T = 100C Diode Continous Forward Current 50 F C Diode Maximum Forward Current I 140 FM V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate-to-Emitter Voltage 30 Maximum Power Dissipation 268 PD TC = 25C W P T = 100C Maximum Power Dissipation 134 D C T Operating Junction and -55 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Junction-to-Case (IGBT) 0.56 JC Junction-to-Case (Diode) R (Diode) 1.0 JC C/W R Case-to-Sink (flat, greased surface) 0.24 CS R JA Junction-to-Ambient (typical socket mount) 40 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 100A (BR)CES GE C V / T Temperature Coeff. of Breakdown Voltage 1.3 mV/C V = 0V, I = 1mA (25C-175C) (BR)CES J GE C 1.60 1.90 I = 35A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage 1.90 V I = 35A, V = 15V, T = 150C CE(on) C GE J 2.00 I = 35A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 1.0mA GE(th) CE GE C V /TJ Threshold Voltage temp. coefficient -18 mV/C V = V , I = 1.0mA (25C - 175C) GE(th) CE GE C gfe Forward Transconductance 25 S V = 50V, I = 35A, PW = 60s CE C I Collector-to-Emitter Leakage Current 1.0 70 AV = 0V, V = 600V CES GE CE 770 V = 0V, V = 600V, T = 175C GE CE J V Diode Forward Voltage Drop 2.0 3.0 V I = 35A FM F 1.4 I = 35A, T = 175C F J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 69 104 I = 35A g C Q Gate-to-Emitter Charge (turn-on) 18 27 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 29 44 V = 400V gc CC E Turn-On Switching Loss 390 508 I = 35A, V = 400V, V = 15V on C CC GE E Turn-Off Switching Loss 632 753 JR = 10, L = 200H, L = 150nH, T = 25C off G S J E Total Switching Loss 1022 1261 Energy losses include tail & diode reverse recovery total t Turn-On delay time 46 56 I = 35A, V = 400V, V = 15V d(on) C CC GE t Rise time 3342ns R = 10, L = 200H, L = 150nH, T = 25C r G S J t Turn-Off delay time 105 117 d(off) t Fall time 44 54 f E Turn-On Switching Loss 1013 I = 35A, V = 400V, V =15V on C CC GE E Turn-Off Switching Loss 929 JR =10, L=200H, L =150nH, T = 175C off G S J Energy losses include tail & diode reverse recovery E Total Switching Loss 1942 total t Turn-On delay time 43 I = 35A, V = 400V, V = 15V d(on) C CC GE t Rise time 35 ns R = 10, L = 200H, L = 150nH r G S t Turn-Off delay time 127 T = 175C d(off) J t Fall time 61 f C Input Capacitance 2113 pF V = 0V ies GE C Output Capacitance 197 V = 30V oes CC C Reverse Transfer Capacitance 65 f = 1.0Mhz res T = 175C, I = 140A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp 600V CC Rg = 10, V = +20V to 0V GE SCSOA Short Circuit Safe Operating Area V = 400V, Vp 600V CC 5 s , V = +15V to 0V Rg = 10 GE Erec Reverse Recovery Energy of the Diode 304 JT = 175C J t Diode Reverse Recovery Time 120 ns V = 400V, I = 35A rr CC F I Peak Reverse Recovery Current 25 A V = 15V, Rg = 10, L =210H, L = 150nH rr GE s Notes: V = 80% (V ), V = 20V, L = 19H, R = 10. CC CES GE G R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Pulse width limited by max. junction temperature.