IRGP4690DPBF Infineon

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE V = 600V CES C C C I = 90A, T = 100C C C t 5s, T = 175C SC J(max) G E E C C G V typ. = 1.70V I = 75A G CE(on) C E TO-247AC TO-247AD n-channel IRGP4690DPbF IRGP4690D-EP Applications Industrial Motor Drive GC E Inverters Gate Collector Emitter UPS Welding Features Benefits High efficiency in a wide range of applications and switching Low V and Switching Losses CE(ON) frequencies Improved reliability due to rugged hard switching performance Square RBSOA and Maximum Junction Temperature 175C and higher power capability Positive V Temperature Coefficient Excellent current sharing in parallel operation CE (ON) 5s short circuit SOA Enables short circuit protection scheme Lead-Free, RoHS compliant Environmentally friendly Standard Pack Base part number Package Type Orderable part number Form Quantity IRGP4690DPbF TO-247AC Tube 25 IRGP4690DPbF IRGP4690D-EPbF TO-247AD Tube 25 IRGP4690D-EPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES IC TC = 25C Continuous Collector Current 140 Continuous Collector Current 90 IC TC = 100C I Pulse Collector Current, V = 15V 225 CM GE Clamped Inductive Load Current, V = 20V I 300 A LM GE I T = 25C Diode Continous Forward Current 70 F C IF TC = 100C Diode Continous Forward Current 45 Diode Maximum Forward Current 300 IFM V Continuous Gate-to-Emitter Voltage 20 GE V Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 454 D C W PD TC = 100C Maximum Power Dissipation 227 Operating Junction and -55 to +175 TJ T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Junction-to-Case (IGBT) R (IGBT) 0.33 JC Junction-to-Case (Diode) R (Diode) 1.0 JC C/W R Case-to-Sink (flat, greased surface) 0.24 CS R Junction-to-Ambient (typical socket mount) 40 JA Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 100A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.30 V/C V = 0V, I = 2.0mA (25C-175C) (BR)CES J GE C 1.70 2.10 I = 75A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage 2.0 V I = 75A, V = 15V, T = 150C CE(on) C GE J = 75A, V = 15V, T = 175C 2.1 I C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 2.1mA GE(th) CE GE C V /T Threshold Voltage temp. coefficient -21 mV/C V = V , I = 2.1mA (25C - 175C) GE(th) J CE GE C gfe Forward Transconductance 50 S V = 50V, I = 75A, PW = 60s CE C I Collector-to-Emitter Leakage Current 1.0 100 AV = 0V, V = 600V CES GE CE 1040 V = 0V, V = 600V, T = 175C GE CE J V Diode Forward Voltage Drop 2.23 3.0 V I = 75A FM F 1.8 I = 75A, T = 175C F J I Gate-to-Emitter Leakage Current 200 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 150 I = 75A g C Q Gate-to-Emitter Charge 40 nC V = 15V ge GE Q Gate-to-Collector Charge 60 V = 400V gc CC E Turn-On Switching Loss 2465 on E Turn-Off Switching Loss 2155 JI = 75A, V = 400V, V = 15V off C CC GE E Total Switching Loss 4620 R = 10, L = 200H, T = 25C total G J t Turn-On delay time 50 Energy losses include tail & diode d(on) t Rise time 70 ns reverse recovery r t Turn-Off delay time 200 d(off) t Fall time 60 f E Turn-On Switching Loss 3870 on E Turn-Off Switching Loss 2815 JI = 75A, V = 400V, V =15V off C CC GE E Total Switching Loss 6685 R =10, L=200H,T = 175C total G J t Turn-On delay time 50 Energy losses include tail & diode d(on) reverse recovery t Rise time 70 ns r t Turn-Off delay time 240 d(off) t Fall time 70 f C Input Capacitance 4440 pF V = 0V ies GE C Output Capacitance 245 V = 30V oes CC C Reverse Transfer Capacitance 130 f = 1.0Mhz res = 175C, I = 300A T J C = 480V, Vp 600V RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC Rg = 10, V = +20V to 0V GE SCSOA Short Circuit Safe Operating Area 5 sV = 400V, Vp 600V CC Rg = 10, V = +15V to 0V GE Erec Reverse Recovery Energy of the Diode 470 JT = 175C J t Diode Reverse Recovery Time 155 ns V = 400V, I = 75A rr CC F I Peak Reverse Recovery Current 27 A V = 15V, Rg = 10, L =60H rr GE Notes: V = 80% (V ), V = 20V, L = 10H, R = 10. CC CES GE G R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Pulse width limited by max. junction temperature.