IRGP4740DPbF IRGP4740D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode V = 650V CES C I = 40A, T =100C C C t 5.5s, T = 175C SC J(max) E E G C C G G V typ. = 1.7V IC = 24A CE(ON) E IRGP4740DPbF IRGP4740D-EPbF n-channel TO-247AC TO-247AD Applications Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Low V and Switching Losses High Efficiency in a Wide Range of Applications CE(ON) 5.5s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 175C Increased Reliability Positive V Temperature Coefficient Excellent Current Sharing in Parallel Operation CE (ON) Lead-Free, RoHs compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGP4740DPbF TO-247AC Tube 25 IRGP4740DPbF IRGP4740D-EPbF TO-247AD Tube 25 IRGP4740D-EPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 650 V CES I T = 25C Continuous Collector Current 60 C C I T = 100C Continuous Collector Current 40 C C I Pulse Collector Current, V = 15V 72 CM GE I Clamped Inductive Load Current, V = 20V 96 A LM GE I T = 25C Diode Continuous Forward Current 45 F C I T = 100C Diode Continuous Forward Current 27 F C I Diode Maximum Forward Current 96 FM V Continuous Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 250 D C W P T = 100C Maximum Power Dissipation 125 D C T Operating Junction and -40 to +175 J T Storage Temperature Range STG C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case-(each IGBT) 0.6 R (IGBT) JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 1.6 JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 13, 2014 IRGP4740DPbF/IRGP4740D-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 650 V V = 0V, I = 100A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 0.86 V/C V = 0V, I = 2mA (25C-175C) V /T GE C (BR)CES J 1.7 2.0 V I = 24A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage CE(on) 2.1 I = 24A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 5.5 7.4 V V = V , I = 700A GE(th) CE GE C V /T Threshold Voltage Temperature Coeff. -20 mV/C V = V , I = 700A (25C-150C) CE GE C GE(th) J gfe Forward Transconductance 16 S V = 50V, I = 24A, PW = 20s CE C 1.0 35 A V = 0V, V = 650V GE CE I Collector-to-Emitter Leakage Current CES 530 V = 0V, V = 650V, T = 175C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE 1.6 2.4 V I = 24A F V Diode Forward Voltage Drop F 1.26 I = 24A, T = 175C F J Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max Units Conditions Q Total Gate Charge (turn-on) 47 70 I = 24A g C Q Gate-to-Emitter Charge (turn-on) 15 23 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 20 30 V = 400V gc CC E Turn-On Switching Loss 520 740 on E Turn-Off Switching Loss 240 350 J off I = 24A, V = 400V, V =15V C CC GE E Total Switching Loss 760 1090 total R = 10, L = 0.40H, T = 25C G J t Turn-On delay time 24 40 d(on) Energy losses include tail & diode t Rise time 27 45 r ns reverse recovery t Turn-Off delay time 73 90 d(off) t Fall time 23 40 f E Turn-On Switching Loss 1120 on E Turn-Off Switching Loss 475 off J I = 24A, V = 400V, V =15V C CC GE E Total Switching Loss 1595 total R = 10, L = 0.40H, T = 175C G J t Turn-On delay time 22 d(on) Energy losses include tail & diode t Rise time 28 r ns reverse recovery t Turn-Off delay time 88 d(off) t Fall time 74 f C Input Capacitance 1550 V = 0V ies GE pF V = 30V C Output Capacitance 124 oes CC C Reverse Transfer Capacitance 43 f = 1.0MHz res T = 175C, I = 96A J C FULL SQUARE V = 520V, Vp 650V RBSOA Reverse Bias Safe Operating Area CC V = +20V to 0V GE T = 150C,V = 400V, Vp 650V J CC SCSOA Short Circuit Safe Operating Area 5.5 s V = +15V to 0V GE T = 175C Erec Reverse Recovery Energy of the Diode 292 J J V = 400V, I = 24A t Diode Reverse Recovery Time 170 ns CC F rr V = 15V, Rg = 10 I Peak Reverse Recovery Current 17 A rr GE Notes: V = 80% (V ), V = 20V. CC CES GE R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 13, 2014