IRGP4750DPbF IRGP4750D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode V = 650V CES C I = 50A, T =100C C C t 5.5s, T = 175C SC J(max) E E G C C G G V typ. = 1.7V IC = 35A CE(ON) E IRGP4750DPbF IRGP4750DEPbF n-channel Applications TO247AC TO247AD Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Low V and Switching Losses High Efficiency in a Wide Range of Applications CE(ON) 5.5s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 175C Increased Reliability Positive V Temperature Coefficient Excellent Current Sharing in Parallel Operation CE (ON) Lead-Free, RoHs compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGP4750DPbF TO-247AC Tube 25 IRGP4750DPbF IRGP4750D-EPbF TO-247AD Tube 25 IRGP4750D-EPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 650 V CES I T = 25C Continuous Collector Current 70 C C I T = 100C Continuous Collector Current 50 C C I Pulse Collector Current, V = 15V 105 CM GE I Clamped Inductive Load Current, V = 20V 140 A LM GE I T = 25C Diode Continuous Forward Current 80 F C I T = 100C Diode Continuous Forward Current 50 F C I Diode Maximum Forward Current 140 FM V Continuous Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 273 D C W P T = 100C Maximum Power Dissipation 136 D C T Operating Junction and -40 to +175 J T Storage Temperature Range STG C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case-(each IGBT) 0.55 R (IGBT) JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 0.95 JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 13, 2014 IRGP4750DPbF/IRGP4750D-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 650 V V = 0V, I = 100A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 0.72 V/C V = 0V, I = 2.0mA (25C-175C) V /T GE C (BR)CES J 1.7 2.0 I = 35A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage V CE(on) 2.1 I = 35A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 5.5 7.4 V V = V , I = 1.4mA GE(th) CE GE C V /T Threshold Voltage Temperature Coeff. -18 mV/C V = V , I = 1.4mA (25C-175C) CE GE C GE(th) J gfe Forward Transconductance 23 S V = 50V, I = 35A, PW = 20s CE C 1.0 35 A V = 0V, V = 650V GE CE I Collector-to-Emitter Leakage Current CES 1.0 mA V = 0V, V = 650V, T = 175C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE 1.6 2.1 I = 35A F V Diode Forward Voltage Drop V F 1.3 I = 35A, T = 175C F J Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max Units Conditions Q Total Gate Charge (turn-on) 70 105 I = 35A g C Q Gate-to-Emitter Charge (turn-on) 20 30 nC V = 15V GE ge Q Gate-to-Collector Charge (turn-on) 30 45 V = 400V gc CC E Turn-On Switching Loss 1.3 2.2 on E Turn-Off Switching Loss 0.5 0.8 mJ off I = 35A, V = 400V, V =15V C CC GE E Total Switching Loss 1.8 3.0 total R = 10 , T = 25C G J t Turn-On delay time 50 70 d(on) Energy losses include tail & diode t Rise time 30 50 r ns reverse recovery t Turn-Off delay time 105 120 d(off) t Fall time 20 40 f E Turn-On Switching Loss 2.4 on E Turn-Off Switching Loss 0.9 off mJ I = 35A, V = 400V, V =15V C CC GE E Total Switching Loss 3.3 total R = 10 , T = 175C G J t Turn-On delay time 45 d(on) Energy losses include tail & diode t Rise time 30 r ns reverse recovery t Turn-Off delay time 120 d(off) t Fall time 70 f C Input Capacitance 2200 V = 0V ies GE pF V = 30V C Output Capacitance 190 oes CC C Reverse Transfer Capacitance 60 f = 1.0MHz res T = 175C, I = 140A J C FULL SQUARE V = 520V, Vp 650V RBSOA Reverse Bias Safe Operating Area CC V = +20V to 0V GE T = 150C,V = 400V, Vp 650V J CC SCSOA Short Circuit Safe Operating Area 5.5 s V = +15V to 0V GE T = 175C Erec Reverse Recovery Energy of the Diode 380 J J V = 400V, I = 35A t Diode Reverse Recovery Time 150 ns CC F rr V = 15V, Rg = 10 I Peak Reverse Recovery Current 27 A rr GE Notes: V = 80% (V ), V = 20V. CC CES GE R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 13, 2014