X-On Electronics has gained recognition as a prominent supplier of IRGP4790PBF IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IRGP4790PBF IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IRGP4790PBF Infineon

IRGP4790PBF electronic component of Infineon
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See Product Specifications
Part No.IRGP4790PBF
Manufacturer: Infineon
Category: IGBT Transistors
Description: Transistor: IGBT; 650V; 140A; 455W; TO247-3
Datasheet: IRGP4790PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8: USD 4.8081 ea
Line Total: USD 38.46 
Availability - 0
MOQ: 8  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 6.6649
5 : USD 6.2744

0
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 8
Multiples : 1
8 : USD 4.8081

   
Manufacturer
Product Category
Power Dissipation
Case
Mounting
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
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We are delighted to provide the IRGP4790PBF from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRGP4790PBF and other electronic components in the IGBT Transistors category and beyond.

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IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor V = 650V CES C I = 90A, T =100C C C t 5.5s, T = 175C SC J(max) E G E C C G G V typ. = 1.7V IC = 75A E CE(ON) n-channel IRGP4790PbF IRGP4790EPbF Applications TO247AC TO247AD Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Low V and Switching Losses High Efficiency in a Wide Range of Applications CE(ON) 5.5s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 175C Increased Reliability Positive V Temperature Coefficient Excellent Current Sharing in Parallel Operation CE (ON) Lead-Free, RoHs compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGP4790PbF TO-247AC Tube 25 IRGP4790PbF IRGP4790-EPbF TO-247AD Tube 25 IRGP4790-EPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 650 V CES I T = 25C Continuous Collector Current 140 C C I T = 100C Continuous Collector Current 90 C C A I Pulse Collector Current, V=15V 225 CM GE I Clamped Inductive Load Current, V =20V 300 LM GE V V Continuous Gate-to-Emitter Voltage 20 GE P T = 25C Maximum Power Dissipation 455 D C W P T = 100C Maximum Power Dissipation 230 D C T Operating Junction and -40 to +175 J T Storage Temperature Range STG C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case 0.33 R JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 C/W CS Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 R JA 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback August 22, 2014 IRGP4790PbF/IRGP4790-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 650 V V = 0V, I = 100A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 0.65 V/C V = 0V, I = 5.0mA (25C-175C) V /T GE C (BR)CES J 1.7 2.0 V I = 75A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage CE(on) 2.1 I = 75A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 5.5 7.4 V V = V , I = 2.1mA GE(th) CE GE C V /T Threshold Voltage Temperature Coeff. -20 mV/C V = V , I = 2.1mA (25C-150C) CE GE C GE(th) J gfe Forward Transconductance 47 S V = 50V, I = 75A, PW = 20s CE C 1.0 25 A V = 0V, V = 650V GE CE I Collector-to-Emitter Leakage Current CES 1.0 mA V = 0V, V = 650V, T = 175C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max Units Conditions Q Total Gate Charge (turn-on) 140 210 I = 75A g C Q Gate-to-Emitter Charge (turn-on) 50 80 nC V = 15V GE ge Q Gate-to-Collector Charge (turn-on) 60 90 V = 400V gc CC E Turn-On Switching Loss 2.5 3.4 on E Turn-Off Switching Loss 2.2 3.0 mJ off I = 75A, V = 400V, V =15V C CC GE E Total Switching Loss 4.7 6.4 total R = 10 , L = 200H, T = 25C G J t Turn-On delay time 50 70 d(on) Energy losses include tail & diode t Rise time 70 90 r ns reverse recovery t Turn-Off delay time 200 225 d(off) t Fall time 60 80 f E Turn-On Switching Loss 3.9 on E Turn-Off Switching Loss 2.8 off mJ = 75A, V = 400V, V =15V I C CC GE E Total Switching Loss 6.7 total R = 10 , L = 200H, T = 175C G J t Turn-On delay time 50 d(on) Energy losses include tail & diode t Rise time 70 r ns reverse recovery t Turn-Off delay time 240 d(off) t Fall time 70 f C Input Capacitance 4300 V = 0V ies GE C Output Capacitance 230 pF V = 30V oes CC C Reverse Transfer Capacitance 120 f = 1.0MHz res T = 175C, I = 300A J C = 520V, Vp 650V RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC V = +20V to 0V GE T = 150C,V = 400V, Vp 650V J CC SCSOA Short Circuit Safe Operating Area 5.5 s V = +15V to 0V GE Notes: V = 80% (V ), V = 20V. CC CES GE R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback August 22, 2014

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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