SMPS IGBT IRGP50B60PD1-EP WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE C V = 600V CES V typ. = 2.00V CE(on) Applications V = 15V I = 33A Telecom and Server SMPS GE C PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Equivalent MOSFET G Consumer Electronics Power Supplies Parameters Lead-Free R typ. = 61m CE(on) E Features I (FET equivalent) = 50A D NPT Technology, Positive Temperature Coefficient n-channel Lower V (SAT) CE Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability Benefits Parallel Operation for Higher Current Applications Lower Conduction Losses and Switching Losses TO-247AD Higher Switching Frequency up to 150kHz Absolute Maximum Ratings Parameter Max. Units Collector-to-Emitter Voltage 600 V V CES I T = 25C Continuous Collector Current 75 C C Continuous Collector Current 45 I T = 100C C C I Pulse Collector Current (Ref. Fig. C.T.4) 150 CM Clamped Inductive Load Current I 150 A LM T = 25C Diode Continous Forward Current 40 I F C I T = 100C Diode Continous Forward Current 15 F C Maximum Repetitive Forward Current I 60 FRM Gate-to-Emitter Voltage 20 V V GE P T = 25C Maximum Power Dissipation 390 W D C P T = 100C Maximum Power Dissipation 156 D C Operating Junction and -55 to +150 T J T Storage Temperature Range C STG Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.32 C/W JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 1.7 JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA Weight 6.0 (0.21)g (oz) 08/06/08 1 www.irf.comIRGP50B60PD1-EP Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 500A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.31 V/C V = 0V, I = 1mA (25C-125C) (BR)CES J GE C R Internal Gate Resistance 1.7 1MHz, Open Collector G 2.00 2.35 I = 33A, V = 15V 4, 5,6,8,9 C GE V Collector-to-Emitter Saturation Voltage 2.45 2.85 V I = 50A, V = 15V CE(on) C GE I = 33A, V = 15V, T = 125C 2.60 2.95 C GE J 3.20 3.60 I = 50A, V = 15V, T = 125C C GE J V Gate Threshold Voltage 3.0 4.0 5.0 V I = 250A 7,8,9 GE(th) C V /TJ V = V , I = 1.0mA GE(th) Threshold Voltage temp. coefficient -10 mV/C CE GE C gfe Forward Transconductance 41 S V = 50V, I = 33A, PW = 80s CE C I Collector-to-Emitter Leakage Current 5.0 500 A V = 0V, V = 600V CES GE CE V = 0V, V = 600V, T = 125C 1.0 mA GE CE J V Diode Forward Voltage Drop 1.30 1.70 V I = 15A, V = 0V 10 FM F GE 1.20 1.60 I = 15A, V = 0V, T = 125C F GE J I V = 20V, V = 0V Gate-to-Emitter Leakage Current 100 nA GES GE CE Switching Characteristics T = 25C (unless otherwise specified) J Ref.Fig Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 205 308 I = 33A 17 C Q V = 400V Gate-to-Collector Charge (turn-on) 70 105 nC CT1 gc CC Q Gate-to-Emitter Charge (turn-on) 30 45 V = 15V ge GE E Turn-On Switching Loss 255 305 I = 33A, V = 390V CT3 on C CC E V = +15V, R = 3.3, L = 200H Turn-Off Switching Loss 375 445 J off GE G TJ = 25C E Total Switching Loss 630 750 total t Turn-On delay time 30 40 I = 33A, V = 390V CT3 d(on) C CC t V = +15V, R = 3.3, L = 200H Rise time 10 15 ns r GE G t Turn-Off delay time 130 150 T = 25C d(off) J t Fall time 11 15 f E I = 33A, V = 390V Turn-On Switching Loss 580 700 CT3 on C CC E Turn-Off Switching Loss 480 550 J V = +15V, R = 3.3, L = 200H 11,13 off GE G E T = 125C WF1,WF2 Total Switching Loss 1060 1250 total J t Turn-On delay time 26 35 I = 33A, V = 390V CT3 d(on) C CC t Rise time 13 20 ns V = +15V, R = 3.3, L = 200H 12,14 r GE G t T = 125C Turn-Off delay time 146 165 WF1,WF2 d(off) J t Fall time 15 20 f C Input Capacitance 3648 V = 0V 16 ies GE C V = 30V Output Capacitance 322 oes CC C Reverse Transfer Capacitance 56 pF f = 1Mhz res Effective Output Capacitance (Time Related) C eff. V = 0V, V = 0V to 480V 15 oes 215 GE CE Effective Output Capacitance (Energy Related) C eff. (ER) 163 oes T = 150C, I = 150A 3 J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp =600V CT2 CC Rg = 22, V = +15V to 0V GE t Diode Reverse Recovery Time 42 60 ns T = 25C I = 15A, V = 200V, 19 rr J F R T = 125C 74 120 di/dt = 200A/s J Q Diode Reverse Recovery Charge 80 180 nC T = 25C I = 15A, V = 200V, 21 rr J F R 220 600 T = 125C di/dt = 200A/s J I T = 25C I = 15A, V = 200V, Peak Reverse Recovery Current 4.0 6.0 A 19,20,21,22 rr J F R 6.5 10 T = 125C di/dt = 200A/s CT5 J Notes: R typ. = equivalent on-resistance = V typ./ I , where V typ.= 2.00V and I =33A. I (FET Equivalent) is the equivalent MOSFET I CE(on) CE(on) C CE(on) C D D rating 25C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions. V = 80% (V ), V = 15V, L = 28 H, R = 22 . CC CES GE G Pulse width limited by max. junction temperature. Energy losses includetai and diode reverse recovery, Data generated with use of Diode 30ETH06. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oes oes CE CES C eff.(ER) is a fixed capacitance that stores the same energy as C while V is rising from 0 to 80% V . oes oes CE CES 2 www.irf.com