IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE C V = 600V CES V typ. = 2.00V CE(on) Applications V = 15V I = 33A Telecom and Server SMPS GE C PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Equivalent MOSFET G Consumer Electronics Power Supplies Parameters Lead- Free R typ. = 61m CE(on) E I (FET equivalent) = 50A D Features n-channel NPT Technology, Positive Temperature Coefficient Lower V (SAT) CE Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters E Higher Reliability C G Benefits Parallel Operation for Higher Current Applications TO-247AC Lower Conduction Losses and Switching Losses Higher Switching Frequency up to 150kHz Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 75 C C I T = 100C Continuous Collector Current 42 C C I Pulse Collector Current (Ref. Fig. C.T.4) 150 CM Clamped Inductive Load Current 150 A I LM I T = 25C Diode Continous Forward Current 50 F C I T = 100C Diode Continous Forward Current 25 F C I Maximum Repetitive Forward Current 100 FRM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 370 W D C Maximum Power Dissipation 150 P T = 100C D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.34 C/W JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 0.64 JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.50 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA Weight 6.0 (0.21)g (oz) 12/1/04 1 www.irf.comIRGP50B60PDPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 500A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.61 V/C V = 0V, I = 1mA (25C-125C) (BR)CES J GE C R Internal Gate Resistance 1.2 1MHz, Open Collector G 2.0 2.2 I = 33A, V = 15V 4, 5,6,8,9 C GE V I = 50A, V = 15V Collector-to-Emitter Saturation Voltage 2.4 2.6 V CE(on) C GE 2.6 2.9 I = 33A, V = 15V, T = 125C C GE J 3.2 3.6 I = 50A, V = 15V, T = 125C C GE J V I = 250A Gate Threshold Voltage 3.0 4.0 5.0 V 7,8,9 GE(th) C V /TJ Threshold Voltage temp. coefficient -7.07 mV/C V = V , I = 1.0mA GE(th) CE GE C gfe Forward Transconductance 42 S V = 50V, I = 33A, PW = 80s CE C I V = 0V, V = 600V Collector-to-Emitter Leakage Current 5.0 500 A CES GE CE 1.0 mA V = 0V, V = 600V, T = 125C GE CE J I = 25A, V = 0V 1.3 1.7 F GE V Diode Forward Voltage Drop 1.5 2.0 V I = 50A, V = 0V 10 FM F GE 1.3 1.7 I = 25A, V = 0V, T = 125C F GE J I Gate-to-Emitter Leakage Current 100 nA V = 20V, V = 0V GES GE CE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig Qg Total Gate Charge (turn-on) 240 360 I = 33A 17 C Q Gate-to-Collector Charge (turn-on) 41 82 nC V = 400V CT1 gc CC Q V = 15V Gate-to-Emitter Charge (turn-on) 84 130 ge GE E Turn-On Switching Loss 360 590 I = 33A, V = 390V CT3 on C CC E Turn-Off Switching Loss 380 420 J V = +15V, R = 3.3, L = 210H off GE G TJ = 25C E Total Switching Loss 740 960 total t Turn-On delay time 34 44 I = 33A, V = 390V CT3 d(on) C CC t V = +15V, R = 3.3, L = 210H Rise time 26 36 ns r GE G t Turn-Off delay time 130 140 T = 25C d(off) J t Fall time 43 56 f E I = 33A, V = 390V CT3 on Turn-On Switching Loss 610 880 C CC E Turn-Off Switching Loss 460 530 J V = +15V, R = 3.3, L = 210H 11,13 off GE G E Total Switching Loss 1070 1410 T = 125C WF1,WF2 total J t I = 33A, V = 390V CT3 Turn-On delay time 33 43 d(on) C CC t Rise time 26 36 ns V = +15V, R = 3.3 , L = 200H 12,14 r GE G t Turn-Off delay time 140 160 T = 125C WF1,WF2 d(off) J t Fall time 50 65 f C Input Capacitance 4750 V = 0V 16 ies GE C Output Capacitance 390 V = 30V oes CC C Reverse Transfer Capacitance 58 pF f = 1Mhz res Effective Output Capacitance (Time Related) C eff. 280 V = 0V, V = 0V to 480V 15 oes GE CE Effective Output Capacitance (Energy Related) C eff. (ER) 190 oes T = 150C, I = 150A 3 J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp =600V CT2 CC Rg = 22, V = +15V to 0V GE t Diode Reverse Recovery Time 50 75 ns T = 25C I = 25A, V = 200V, 19 rr J F R 105 160 T = 125C di/dt = 200A/s J Q T = 25C I = 25A, V = 200V, Diode Reverse Recovery Charge 112 375 nC 21 rr J F R 420 4200 T = 125C di/dt = 200A/s J I Peak Reverse Recovery Current 4.5 10 A T = 25C I = 25A, V = 200V, 19,20,21,22 rr J F R T = 125C CT5 8.0 15 di/dt = 200A/s J Notes: R typ. = equivalent on-resistance = V typ./ I , where V typ.= 2.00V and I =33A. I (FET Equivalent) is the equivalent MOSFET I CE(on) CE(on) C CE(on) C D D rating 25C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions. V = 80% (V ), V = 20V, L = 28 H, R = 22 . CC CES GE G Pulse width limited by max. junction temperature. Energy losses includetai and diode reverse recovery, Data generated with use of Diode 30ETH06. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oes oes CE CES C eff.(ER) is a fixed capacitance that stores the same energy as C while V is rising from 0 to 80% V . oes oes CE CES 2 www.irf.com