INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C V = 600V CES Low V Trench IGBT Technology CE (on) Low Switching Losses I = 120A C(Nominal) 5s SCSOA Square RBSOA G t 5s, T = 175C SC J(max) 100% of The Parts Tested for I LM Positive V Temperature Coefficient. CE (on) E V typ. = 1.70V Ultra Fast Soft Recovery Co-pak Diode CE(on) Tighter Distribution of Parameters n-channel Lead-Free, RoHS Compliant C Benefits High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due E to Low V and Low Switching Losses C CE (ON) G Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation Low EMI Super-247 GC E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES 240 I T = 25C Continuous Collector Current C C 160 I T = 100C Continuous Collector Current C C I Nominal Current 120 NOMINAL I Pulse Collector Current, V = 15V 360 CM GE I Clamped Inductive Load Current, V = 20V 480 A LM GE I T = 25C Diode Continous Forward Current 240 F C I T = 100C Diode Continous Forward Current 160 F C Diode Maximum Forward Current I 480 FM V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate-to-Emitter Voltage 30 T = 25C Maximum Power Dissipation 750 W P D C P T = 100C Maximum Power Dissipation 375 D C T Operating Junction and -55 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case-(each IGBT) R (IGBT) 0.20 JC Thermal Resistance Junction-to-Case-(each Diode) R (Diode) 0.63 C/W JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA IRGPS4067DPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V 600 V V = 0V, I = 100A (BR)CES Collector-to-Emitter Breakdown Voltage GE C V /T (BR)CES J T emperature Coeff. of B reakdown Voltage 0.27 V/CV = 0V, I = 4.0mA (25C-175C) GE C 1.70 2.05 I = 120A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage 2.15 V I = 120A, V = 15V, T = 150C CE(on) C GE J 2.20 I = 120A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 5.6mA GE(th) CE GE C V /TJ GE (th) Threshold Voltage temp. coefficient -17 mV/C V = V , I = 5.6mA (25C - 175C) CE GE C gfe Forward Transconductance 77 S V = 50V, I = 120A CE C I Collector-to-Emitter Leakage Current 1.0 150 A V = 0V, V = 600V CES GE CE 2.3 mAV = 0V, V = 600V, T = 175C GE CE J V Diode Forward Voltage Drop 2.4 3.0 V I = 120A FM F 1.9 I = 120A, T = 175C F J IGES Gate-to-Emitter Leakage Current 400 nA VGE = 20V Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 240 360 I = 120A g C Q Gate-to-Emitter Charge (turn-on) 70 105 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 90 135 V = 400V gc CC E Turn-On Switching Loss 5750 7990 I = 120A, V = 400V, V = 15V on C CC GE E Turn-Off Switching Loss 3430 4360 J R = 4.7, L = 66H, T = 25C off G J E Total Switching Loss 9180 12350 E nergy los s es include tail & diode revers e recovery total t Turn-On delay time 80 100 I = 120A, V = 400V, V = 15V d(on) C CC GE tr Rise time 70 125 ns RG = 4.7 , L = 66H, TJ = 25C t Turn-Off delay time 190 220 d(off) t Fall time 40 60 f E Turn-On Switching Loss 7740 I = 120A, V = 400V, V =15V on C CC GE E Turn-Off Switching Loss 4390 J R =4.7 , L=66H, T = 175C off G J E nergy los s es include tail & diode revers e recovery E Total Switching Loss 12130 total t Turn-On delay time 80 I = 120A, V = 400V, V = 15V d(on) C CC GE t Rise time 75 ns R = 4.7, L = 66H r G t Turn-Off delay time 230 T = 175C d(off) J t Fall time 55 f C Input Capacitance 7750 pF V = 0V ies GE C Output Capacitance 550 V = 30V oes CC C Reverse Transfer Capacitance 225 f = 1.0Mhz res T = 175C, I = 480A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp =600V CC Rg = 4.7, V = +20V to 0V GE SCSOA Short Circuit Safe Operating Area 5 s V = 400V, Vp =600V CC Rg = 4.7, V = +15V to 0V GE Erec Reverse Recovery Energy of the Diode 500 J T = 175C J trr Diode Reverse Recovery Time 130 ns VCC = 400V, IF = 120A Irr Peak Reverse Recovery Current 36 A VGE = 15V, Rg = 4.7 , L =100H Notes: V = 80% (V ), V = 20V, L = 66H, R = 4.7, tested in production I 400A. CC CES GE G LM Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at T of approximately 90C. J Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current limit is 120A. Note that current limitations arising from heating of the device leads may occur. Maximum limits are based on statistical sample size characterization.