IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C V = 1200V CES Features Non Punch Through IGBT Technology. Low Diode VF. V typ. = 3.12V CE(on) 10s Short Circuit Capability. Square RBSOA. G V = 15V, Ultrasoft Diode Reverse Recovery Characteristics. GE Positive VCE (on) Temperature Coefficient. E Super-247 Package. I = 40A, Tj=25C CE Lead-Free N-channel Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Significantly Less Snubber Required Excellent Current Sharing in Parallel Operation. Super-247 Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES I T = 25C Continuous Collector Current 80 C C I T = 100C Continuous Collector Current 40 C C I Pulsed Collector Current 160 A CM I Clamped Inductive Load Current 160 LM I T = 25C Diode Continuous Forward Current 80 F C I T = 100C Diode Continuous Forward Current 40 F C I Diode Maximum Forward Current 160 FM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 595 D C P T = 100C Maximum Power Dissipation 238 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Min. Typ. Max. Units R Junction-to-Case - IGBT 0.20 JC R Junction-to-Case - Diode 0.83 C/W JC R Case-to-Sink, flat, greased surface 0.24 CS R Junction-to-Ambient, typical socket mount 40 JA Recommended Clip Force 20 (2) N(kgf) Wt Weight 6.0 (0.21) g (oz) Le Internal Emitter Inductance (5mm from package) 13 nH www.irf.com 1 11/19/04IRGPS40B120UDP Electrical Characteristics T = 25C (unless otherwise specified) J Ref.Fig. Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 500A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.40 V/C V = 0V, I = 1.0mA, (25C-125C) (BR)CES J GE C V Collector-to-Emitter Saturation Voltage 3.12 3.40 I = 40A V = 15V 5, 6 CE(on) C GE 7, 9 3.39 3.70 V I = 50A C 3.88 4.30 I = 40A, T = 125C 10 C J 4.24 4.70 I = 50A, T = 125C 11 C J 9,10 V Gate Threshold Voltage 4.0 5.0 6.0 V = V , I = 250A GE(th) CE GE C 11 ,12 V /T Temperature Coeff. of Threshold Voltage -12 mV/C V = V , I = 1.0mA, (25C-125C) GE(th) J CE GE C g Forward Transconductance 30.5 S V = 50V, I = 40A, PW=80s fe CE C I Zero Gate Voltage Collector Current 500 A V = 0V, V = 1200V CES GE CE 420 1200 V = 0V, V = 1200V, T = 125C GE CE J V Diode Forward Voltage Drop 2.03 2.40 I = 40A FM C 8 2.17 2.60 V I = 50A C 2.26 2.68 I = 40A, T = 125C C J 2.46 2.95 I = 50A, T = 125C C J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Ref.Fig. Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 340 510 I = 40A 23 C Qge Gate - Emitter Charge (turn-on) 40 60 nC V = 600V CT1 CC Q Gate - Collector Charge (turn-on) 165 248 V = 15V gc GE CT4 E Turn-On Switching Loss 1400 1750 J I = 40A, V = 600V on C CC WF1 E Turn-Off Switching Loss 1650 2050 V = 15V,R = 4.7, L =200H off GE G WF2 E Total Switching Loss 3050 3800 Ls = 150nH T = 25C tot J E Turn-On Switching Loss 1950 2300 T = 125C 13,15 on J E Turn-Off Switching Loss 2200 2950 J Energy losses includetai and off E Total Switching Loss 4150 5250 diode reverse recovery. tot 14, 16 t Turn-On Delay Time 76 99 I = 40A, V = 600V d(on) C CC CT4 t Rise Time 39 55 V = 15V, R = 4.7 L =200H r GE G WF1 t Turn-Off Delay Time 332 365 ns Ls = 150nH, T = 125C d(off) J WF2 t Fall Time 25 33 f C Input Capacitance 4300 V = 0V ies GE 22 C Output Capacitance 330 pF V = 30V oes CC C Reverse Transfer Capacitance 160 f = 1.0MHz res T = 150C, I = 160A, Vp =1200V J C 4 RBSOA Reverse Bias Safe Operting Area FULL SQUARE V = 1000V, V = +15V to 0V CC GE CT2 R = 4.7 G T = 150C, Vp =1200V J CT3 SCSOA Short Circuit Safe Operting Area 10 s V = 900V, V = +15V to 0V, CC GE WF4 R = 4.7 G 17,18,19 Erec Reverse Recovery energy of the diode 3346 J T = 125C J 20, 21 t Diode Reverse Recovery time 180 ns V = 600V, I = 60A, L =200H rr CC F CT4,WF3 I Diode Peak Reverse Recovery Current 50 A V = 15V,R = 4.7, Ls = 150nH rr GE G 2 www.irf.com