IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C V = 1200V CES Features Non Punch Through IGBT Technology. 10s Short Circuit Capability. V typ. = 3.12V CE(on) Square RBSOA. Positive VCE (on) Temperature Coefficient. G V = 15V, Super-247 Package. GE Lead-Free E I = 40A, Tj=25C n-channel CE Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Significantly Less Snubber Required Excellent Current Sharing in Parallel Operation. Super-247 Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES I T = 25C Continuous Collector Current 80 C C I T = 100C Continuous Collector Current 40 C C I Pulsed Collector Current 160 A CM I Clamped Inductive Load Current 160 LM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 595 D C P T = 100C Maximum Power Dissipation 238 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Min. Typ. Max. Units R Junction-to-Case - IGBT 0.20 C/W JC R Case-to-Sink, flat, greased surface 0.24 CS R Junction-to-Ambient, typical socket mount 40 JA Recommended Clip Force 20 (2) N(kgf) Wt Weight 6.0 (0.21) g (oz) Le Internal Emitter Inductance (5mm from package) 13 nH www.irf.com 1 03/15/05IRGPS40B120UP Electrical Characteristics T = 25C (unless otherwise specified) J Ref.Fig. Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 500A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.40 V/C V = 0V, I = 1.0mA, (25C-125C) (BR)CES J GE C V Collector-to-Emitter Saturation Voltage 3.12 3.40 I = 40A V = 15V 5, 6 CE(on) C GE 7, 9 3.39 3.71 V I = 50A C 3.88 4.39 I = 40A, T = 125C 10 C J 4.24 4.79 I = 50A, T = 125C 11 C J 8, 9 V Gate Threshold Voltage 4.0 5.0 6.0 V = V , I = 250A GE(th) CE GE C 10 ,11 V /T Temperature Coeff. of Threshold Voltage -12 mV/C V = V , I = 1.0mA, (25C-125C) GE(th) J CE GE C g Forward Transconductance 30.5 S V = 50V, I = 40A, PW=80s fe CE C I Zero Gate Voltage Collector Current 500 A V = 0V, V = 1200V CES GE CE 100 1200 V = 0V, V = 1200V, T = 125C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Ref.Fig. Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 340 510 I = 40A 17 C Qge Gate - Emitter Charge (turn-on) 43 65 nC V = 600V CT1 CC Q Gate - Collector Charge (turn-on) 165 248 V = 15V gc GE CT4 E Turn-On Switching Loss 1400 1750 J I = 40A, V = 600V on C CC WF1 E Turn-Off Switching Loss 1650 2050 V = 15V,R = 4.7, L =200H off GE G WF2 E Total Switching Loss 3050 3800 Ls = 150nH T = 25C tot J E Turn-On Switching Loss 1950 2300 T = 125C 12,14 on J E Turn-Off Switching Loss 2200 2950 J Energy losses includetai and off E Total Switching Loss 4150 5250 diode reverse recovery. tot 13, 15 t Turn-On Delay Time 76 99 I = 40A, V = 600V d(on) C CC CT4 t Rise Time 39 55 V = 15V, R = 4.7 L =200H r GE G WF1 t Turn-Off Delay Time 332 365 ns Ls = 150nH, T = 125C d(off) J WF2 t Fall Time 25 33 f C Input Capacitance 4300 V = 0V ies GE 16 C Output Capacitance 270 pF V = 30V oes CC C Reverse Transfer Capacitance 160 f = 1.0MHz res T = 150C, I = 160A, Vp =1200V J C 4 RBSOA Reverse Bias Safe Operting Area FULL SQUARE V = 1000V, V = +15V to 0V CC GE R = 4.7 G T = 150C, Vp =1200V J CT3 SCSOA Short Circuit Safe Operting Area 10 s V = 900V, V = +15V to 0V, CC GE WF4 R = 4.7 G Note: V = 80% (V ), V = 20V, L = 100H, R = 4.7. CC CES GE G 2 www.irf.com