IRGPS46160DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE V = 600V CES C C I = 160A, T = 100C C C E t 5s, T = 175C SC J(max) C G G V typ. = 1.70V I = 120A CE(on) C E Super-247 n-channel Applications Industrial Motor Drive G C E Inverters Gate Collector Emitter UPS Welding Features Benefits High efficiency in a wide range of applications and switching Low V and Switching Losses CE(ON) frequencies Improved reliability due to rugged hard switching performance Square RBSOA and Maximum Junction Temperature 175C and higher power capability Positive V Temperature Coefficient Excellent current sharing in parallel operation CE (ON) 5s short circuit SOA Enables short circuit protection scheme Lead-Free, RoHS compliant Environmentally friendly Standard Pack Base part number Package Type Orderable part number Form Quantity IRGPS46160DPbF Super-247 Tube 25 IRGPS46160DPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES 240 I T = 25C Continuous Collector Current C C Continuous Collector Current 160 IC TC = 100C Pulse Collector Current, V = 15V 360 I CM GE Clamped Inductive Load Current, V = 20V I 480 A LM GE 240 Diode Continous Forward Current IF TC = 25C 160 Diode Continous Forward Current I T = 100C F C Diode Maximum Forward Current I 480 FM V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 750 D C W P T = 100C Maximum Power Dissipation 375 D C Operating Junction and -55 to +175 TJ Storage Temperature Range C T STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Junction-to-Case (IGBT) 0.20 R JC (IGBT) q Junction-to-Case (Diode) R (Diode) 0.63 qJC C/W R Case-to-Sink (flat, greased surface) 0.24 CS q Junction-to-Ambient (typical socket mount) 40 R JA q 1 www.infineon.com 2019 Infineon Technologies AG September 20, 2019IRGPS46160DPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 100A (BR)CES GE C DV /DT Temperature Coeff. of Breakdown Voltage 0.27 V/C V = 0V, I = 4.0mA (25C-175C) (BR)CES J GE C 1.70 2.05 I = 120A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage 2.15 V I = 120A, V = 15V, T = 150C CE(on) C GE J 2.20 I = 120A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 5.6mA GE(th) CE GE C DV /DT Threshold Voltage temp. coefficient -17 mV/C V = V , I = 5.6mA (25C - 175C) GE(th) J CE GE C gfe Forward Transconductance 77 S V = 50V, I = 120A CE C I Collector-to-Emitter Leakage Current 1.0 150 A V = 0V, V = 600V CES GE CE 2.3 mA V = 0V, V = 600V, T = 175C GE CE J V Diode Forward Voltage Drop 2.4 3.0 V I = 120A FM F 1.9 I = 120A, T = 175C F J I Gate-to-Emitter Leakage Current 400 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 240 I = 120A g C Q Gate-to-Emitter Charge 70 nC V = 15V ge GE Q Gate-to-Collector Charge 90 V = 400V gc CC E Turn-On Switching Loss 5750 on E Turn-Off Switching Loss 3430 J I = 120A, V = 400V, V = 15V off C CC GE E Total Switching Loss 9180 R = 4.7W, L = 66H, T = 25C total G J t Turn-On delay time 80 Energy losses include tail d(on) t Rise time 70 ns & diode reverse recovery r t Turn-Off delay time 190 d(off) t Fall time 40 f E Turn-On Switching Loss 7740 on E Turn-Off Switching Loss 4390 J I = 120A, V = 400V, V =15V off C CC GE E Total Switching Loss 12130 R = 4.7W, L = 66H, T = 175C total G J t Turn-On delay time 80 Energy losses include tail d(on) t Rise time 75 ns & diode reverse recovery r t Turn-Off delay time 230 d(off) t Fall time 55 f C Input Capacitance 7750 pF V = 0V ies GE C Output Capacitance 550 V = 30V oes CC C Reverse Transfer Capacitance 225 f = 1.0Mhz res T = 175C, I = 480A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp 600V CC Rg = 4.7 W, V = +20V to 0V GE SCSOA Short Circuit Safe Operating Area 5 s V = 400V, Vp 600V CC Rg = 4.7 , V = +15V to 0V W GE Erec Reverse Recovery Energy of the Diode 500 J T = 175C J t Diode Reverse Recovery Time 130 ns V = 400V, I = 120A rr CC F I Peak Reverse Recovery Current 36 A V = 15V, Rg = 4.7 W, L = 100H rr GE Notes: V = 80% (V ), V = 20V, L = 66H, R = 4.7 tested in production I 400A. CC CES GE G LM Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at T of approximately 90C. J Values influenced by parasitic L and C in measurement. Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current limit is 120A. Note that current limitations arising from heating of the device leads may occur. www.infineon.com 2019 Infineon Technologies AG September 20, 2019 2