IRGPS66160DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode V = 600V CES C I = 160A, T =100C C C t 5s, T = 175C SC J(max) G V typ. = 1.65V IC = 120A CE(ON) E IRGPS66160DPbF n-channel Super247 Applications Welding G C E H Bridge Converters Gate Collector Emitter Features Benefits Low V and Switching Losses High Efficiency in a Wide Range of Applications CE(ON) Optimized Diode for Full Bridge Hard Switch Converters Optimized for Welding and H Bridge Converters Improved Reliability due to Rugged Hard Switching Square RBSOA and Maximum Temperature of 175C Performance and High Power Capability 5s Short Circuit Enables Short Circuit Protection Operation Positive V Temperature Co-efficient Excellent Current Sharing in Parallel Operation CE (ON) Lead-free, RoHS compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGPS66160DPbF Super 247 Tube 25 IRGPS66160DPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 240 C C I T = 100C Continuous Collector Current 160 C C I Pulse Collector Current, V = 15V 360 CM GE A I Clamped Inductive Load Current, V = 20V 480 LM GE I T = 100C Diode Repetitive Peak Forward Current 80 FRM C I Diode Maximum Forward Current 480 FM V Continuous Gate-to-Emitter Voltage 20 GE V P T = 25C Maximum Power Dissipation 750 D C W P T = 100C Maximum Power Dissipation 375 D C T Operating Junction and -40 to +175 J T Storage Temperature Range STG C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case-(each IGBT) 0.20 R (IGBT) JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 1.37 JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 13, 2014 IRGPS66160DPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 100A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 0.54 V/C V = 0V, I = 4.0mA (25C-175C) V /T GE C (BR)CES J 1.65 1.95 I = 120A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage 1.95 V I = 120A, V = 15V, T = 150C CE(on) C GE J 2.0 I = 120A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 5.6mA GE(th) CE GE C Threshold Voltage Temperature Coeff. -16 mV/C V = V , I = 5.6mA (25C-175C) V /T CE GE C GE(th) J gfe Forward Transconductance 86 S V = 50V, I = 120A, PW = 20s CE C 1.0 150 V = 0V, V = 600V GE CE I Collector-to-Emitter Leakage Current A CES 2000 V = 0V, V = 600V, T = 175C GE CE J I Gate-to-Emitter Leakage Current 400 nA V = 20V GES GE 1.80 2.60 I = 24A F V Diode Forward Voltage Drop V F 1.30 I = 24A, T = 175C F J Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max Units Conditions Total Gate Charge (turn-on) 220 I = 120A Q g C Q Gate-to-Emitter Charge (turn-on) 60 nC V = 15V GE ge Q Gate-to-Collector Charge (turn-on) 90 V = 400V gc CC E Turn-On Switching Loss 4470 on E Turn-Off Switching Loss 3430 J off I = 120A, V = 400V, V =15V C CC GE E Total Switching Loss 7900 total R = 4.7 , L= 66H, T = 25C G J t Turn-On delay time 80 d(on) Energy losses include tail & diode t Rise time 75 r ns reverse recovery t Turn-Off delay time 190 d(off) t Fall time 40 f E Turn-On Switching Loss 5360 on E Turn-Off Switching Loss 4390 J off I = 120A, V = 400V, V =15V C CC GE E Total Switching Loss 9750 total R = 4.7 , L= 66H, T = 175C G J t Turn-On delay time 80 d(on) Energy losses include tail & diode t Rise time 130 r ns reverse recovery t Turn-Off delay time 260 d(off) t Fall time 90 f C Input Capacitance 7660 V = 0V ies GE C Output Capacitance 470 pF V = 30V CC oes C Reverse Transfer Capacitance 250 f = 1.0MHz res T = 175C, I = 480A J C FULL SQUARE V = 480V, Vp 600V RBSOA Reverse Bias Safe Operating Area CC V = +20V to 0V GE T = 150C,V = 400V, Vp 600V J CC SCSOA Short Circuit Safe Operating Area 5 s V = +15V to 0V GE Erec Reverse Recovery Energy of the Diode 420 J T = 175C J t Diode Reverse Recovery Time 95 ns V = 400V, I = 24A, V = 15V rr CC F GE Rg = 4.7 L=200H, Ls=150nH I Peak Reverse Recovery Current 34 A rr Notes: V = 80% (V ), V = 20V, Rg = 4.7 L=66H. CC CES GE R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. fsw =40KHz, refer to figure 26. 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 13, 2014