IRGR4045DPbF WITH C ULTRAFAST SOFT RECOVERY DIODE Features Low V Trench IGBT Technology CE (on) Low Switching Losses Maximum Junction temperature 175 C G 5 s SCSOA Square RBSOA E 100% of the parts tested for I LM n-channel Positive V Temperature Coefficient. CE (on) Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant Benefits High Efficiency in a Wide Range of Applications D-Pak IRGR4045DPbF Suitable for a Wide Range of Switching Frequencies due to Low V and Low Switching Losses CE (ON) Rugged Transient Performance for Increased Reliability G C E Excellent Current Sharing in Parallel Operation Gate Colletor Emitter Low EMI Absolute Maximum Ratings Parameter Units Max. V Collector-to-Emitter Breakdown Voltage 600 V CES I T = 25C Continuous Collector Current 12 C C I T = 100C Continuous Collector Current 6.0 C C I Pulsed Collector Current, V = 15V 18 CM GE I Clamped Inductive Load Current, V = 20V 24 A LM GE I T =25C Diode Continuous Forward Current 8.0 F C I T =100C Diode Continuous Forward Current 4.0 F C I Diode Maximum Forward Current 24 FM Continuous Gate-to-Emitter Voltage 20 V V GE 30 Transient Gate-to-Emitter Voltage 77 P T =25 Maximum Power Dissipation W D C 39 P T =100 Maximum Power Dissipation D C T Operating Junction and C J -55 to + 175 T Storage Temperature Range STG 300 (0.063 in. (1.6mm) from case) Soldering Temperature, for 10 seconds Thermal Resistance Parameter Min. Typ. Max. Units R Junction-to-Case - IGBT 1.9 JC Junction-to-Case - Diode R 6.8 JC C/W R Junction-to-Ambient (PCB Mount) 50 JA R Junction-to-Ambient 110 JA *Qualification standards can be found at IRGR4045DPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig V = 0V, I =100 A V 600 V (BR)CES Collector-to-Emitter Breakdown Voltage GE c CT 6 o V = 0V, I = 250A ( 25 -175 C ) V / T 0.36 V/C GE c (BR)CES J T emperature Coeff. of B reakdown Voltage I = 6.0A, V = 15V, T = 25C 1.7 2.0 C GE J I = 6.0A, V = 15V, T = 150C V Collector-to-Emitter Saturation Voltage 2.07 V 5,6,7,9, CE(on) C GE J 2.14 I = 6.0A, V = 15V, T = 175C 10 ,11 C GE J V = V , I = 150A V Gate Threshold Voltage 3.5 6.5 V GE(th) CE GE C 9 ,10 ,11,12 o V = V , I = 250A ( 25 -175 C ) -13 VGE (th)/ TJ Threshold Voltage temp. coefficient mV/C CE GE C V = 25V, I = 6.0A, PW =80 s gfe Forward Transconductance 5.8 S CE C V = 0V,V = 600V I 25 A CES GE CE Collector-to-Emitter Leakage Current V = 0V, V = 600V, T =175C 8 250 GE CE J I = 6.0A V 1.60 2.30 V FM F Diode Forward Voltage Drop I = 6.0A, T = 175C 1.30 F J V = 20 V I Gate-to-Emitter Leakage Current 100 nA GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig Q Total Gate Charge (turn-on) 13 19.5 I = 6.0A 24 g C CT 1 Q Gate-to-Emitter Charge (turn-on) 3.1 4.65 nC V = 400V ge CC Q Gate-to-Collector Charge (turn-on) 6.4 9.6 V = 15V gc GE E Turn-On Switching Loss 56 86 I = 6.0A, V = 400V, V = 15V on C CC GE E Turn-Off Switching Loss 122 143 JR = 47, L=1mH, L = 150nH, T = 25C CT 4 off G S J E Total Switching Loss 178 229 E nergy los s es include tail and diode revers e recovery total td(on) Turn-On delay time 27 35 IC = 6.0A, VCC = 400V t Rise time 11 15 ns R = 47, L=1mH, L = 150nH CT 4 r G S t Turn-Off delay time 75 93 T = 25C d(off) J tf Fall time 17 22 13 ,15 E Turn-On Switching Loss 140 I = 6.0A, V = 400V, V = 15V on C CC GE E Turn-Off Switching Loss 189 J R = 47, L=1mH, L = 150nH, T = 175C CT 4 off G S J E nergy los s es include tail and diode revers e recovery WF1,WF 2 E Total Switching Loss 329 total t Turn-On delay time 26 I = 6.0A, V = 400V 14 ,16 d(on) C CC t Rise time 12 ns R = 47, L=1mH, L = 150nH CT 4 r G S WF1,WF 2 td(off) Turn-Off delay time 95 TJ = 175C t Fall time 32 f C Input Capacitance 350 V = 0V 23 ies GE pF Coes Output Capacitance 29 VCC = 30V C Reverse Transfer Capacitance 10 f = 1Mhz res T = 175C, I = 24A 4 J C CT 2 RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 500V, Vp =600V CC R = 100, V = +20V to 0V G GE V = 400V, Vp =600V 22 CC SCSOA Short Circuit Safe Operating Area 5 s CT 3, WF 4 RG = 100 , VGE = +15V to 0V o Erec Reverse recovery energy of the diode 178 JT = 175 C 17,18 ,19 J Diode Reverse recovery time 74 ns V = 400V, I = 6.0A trr CC F 20,21 WF3 Irr Peak Reverse Recovery Current 12 A VGE = 15V, Rg = 47 , L=1mH, LS=150nH Notes: V = 80% (V ), V = 15V, L = 1.0mH, R = 47 CC CES GE G Pulse width limited by max. junction temperature. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994. Maximum limits are based on statistical sample size characterization. 2 www.irf.com