IRGS15B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features C V = 600V CES Low VCE (on) Non Punch Through IGBT Technology. I = 15A, T =100C C C 10s Short Circuit Capability. G Square RBSOA. Positive VCE (on) Temperature Coefficient. t > 10s, T =150C sc J E Lead-Free n-channel V typ. = 1.8V CE(on) Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. 2 D Pak IRGS15B60KPbF Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 600 V I T = 25C Continuous Collector Current 31 C C I T = 100C Continuous Collector Current 15 C C A I Pulse Collector Current Vge = 15V 62 CM I Clamped Inductive Load Current Vge = 20V 62 LM V Continuous Gate-to-Emitter Voltage 20 V GE P T = 25C D C Maximum Power Dissipation 208 W P T = 100C D C Maximum Power Dissipation 83 T J Operating Junction and -55 to +150 T STG Storage Temperature Range C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Junction-to-Case-IGBT 0.6 JC C/W R CS Case-to-Sink (flat, greased surface) 0.5 R Junction-to-Ambient (PCB Mount steady state) JA 40 Weight 1.44g (oz) www.irf.com 1 02/22/11IRGS15B60KPbF Electrical Characteristics T = 25C (unless otherwise specified) J Ref.Fig Parameter Min. Typ. Max. Units Conditions V V = 0V, I = 500A Collector-to-Emitter Breakdown Voltage 600 V (BR)CES GE C V / T Temperature Coeff. of Breakdown Voltage 0.3 V/C V = 0V, I = 1.0mA (25C-150C) (BR)CES J GE C 1.5 1.8 2.2 I = 15A, V = 15V, T = 25C 5,6,7 C GE J V Collector-to-Emitter Saturation Voltage 2.05 2.5 V I = 15A, V = 15V, T = 125C 8,9,10 CE(on) C GE J I = 15A, V = 15V, T = 150C 2.1 2.6 C GE J V Gate Threshold Voltage 3.5 4.5 5.5 V V = V , I = 250A 8,9 GE(th) CE GE C V / TJ Threshold Voltage temp. coefficient -10 mV/C V = V , I =1.0mA (25C - 150C) 10,11 GE(th) CE GE C gfe Forward Transconductance 10.6 S V = 50V, I = 20A, PW = 80s CE C I Collector-to-Emitter Leakage Current 5.0 150 V = 0V, V = 600V, T = 25C CES GE CE J A 500 1000 V = 0V, V = 600V, T = 150C GE CE J I V = 20V Gate-to-Emitter Leakage Current 100 nA GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig Q Total Gate Charge (turn-on) 56 84 I = 15A g C Q Gate-to-Emitter Charge (turn-on) 7.0 10 nC V = 15V CT1 ge GE Q V = 400V Gate-to-Collector Charge (turn-on) 26 39 gc CC E Turn-On Switching Loss 220 330 I = 15A, V = 400V, V = 15V CT4 on C CC GE E Turn-Off Switching Loss 340 455 J R = 22 , L = 200H off G L = 150nH T = 25C E Total Switching Loss 560 785 total S J t I = 15A, V = 400V, V = 15V Turn-On delay time 34 44 CT4 d(on) C CC GE t Rise time 16 22 ns R = 22 , L = 200H r G t Turn-Off delay time 184 200 L = 150nH T = 25C d(off) S J t Fall time 20 26 f E I = 15A, V = 400V, V = 15V CT4 Turn-On Switching Loss 355 470 on C CC GE E Turn-Off Switching Loss 490 600 J R = 22 , L = 200H 12,14 off G L = 150nH T = 150C E Total Switching Loss 835 1070 S J WF1, WF2 total t I = 15A, V = 400V, V = 15V d(on) Turn-On delay time 34 44 C CC GE 13, 15 t Rise time 18 25 ns R = 22 , L = 200H CT4 r G t Turn-Off delay time 203 226 L = 150nH T = 150C WF1 d(off) S J t Fall time 28 36 WF2 f C Input Capacitance 850 V = 0V ies GE C Output Capacitance 75 pF V = 30V oes CC C Reverse Transfer Capacitance 35 f = 1.0Mhz res I = 62A 4 C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 500V, Vp =600V CT2 CC Rg = 22 , V = +20V to 0V, T =150C GE J V = 360V, Vp =600V ,T = 150C SCSOA Short Circuit Safe Operating Area CT3 CC J 10 s Rg = 22 , V = +15V to 0V WF3 GE Note to are on page 11 2 www.irf.com