IRGS4064DPbF WITH C ULTRAFAST SOFT RECOVERY DIODE Features = Low V Trench IGBT Technology CE (on) Low Switching Losses G Maximum Junction temperature 175 C 5 s SCSOA E Square RBSOA = n-channel 100% of The Parts Tested for (I ) LM Positive V Temperature Coefficient. CE (on) Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters C Lead-Free Package Benefits High Efficiency in a Wide Range of Applications E C Suitable for a Wide Range of Switching Frequencies due G to Low V and Low Switching Losses CE (ON) Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation 2 D Pak Low EMI GC E Gate Collector Emitter Absolute Maximum Ratings Parameter Units Max. V Collector-to-Emitter Breakdown Voltage 600 V CES I T = 25C Continuous Collector Current 20 C C I T = 100C Continuous Collector Current 10 C C I Pulsed Collector Current 40 CM I Clamped Inductive Load Current 40 A LM I T =25C Diode Continuous Forward Current 20 F C I T =100C Diode Continuous Forward Current 10 F C Diode Maximum Forward Current I 40 FM Continuous Gate-to-Emitter Voltage 20 V V GE Transient Gate-to-Emitter Voltage 30 P T =25 Maximum Power Dissipation 101 W D C P T =100 Maximum Power Dissipation 50 D C T Operating Junction and C J -55 to + 175 T Storage Temperature Range STG 300 (0.063 in. (1.6mm) from case) Soldering Temperature, for 10 seconds Thermal Resistance Parameter Min. Typ. Max. Units Junction-to-Case - IGBT R 1.49 JC R Junction-to-Case - Diode 3.66 JC C/W R Case-to-Sink, flat, greased surface 0.50 CS Junction-to-Ambient, typical socket mount R 40 JA g Wt Weight 1.5 1 www.irf.com 02/16/12IRGS4064DPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 100A (BR)CES GE C CT 6 V /T Temperature Coeff. of Breakdown Voltage 0.47 V/C V = 0V, I = 500A (25C-175C) (BR)CES J GE C 1.6 1.91 IC = 10A, VGE = 15V, TJ = 25C V Collector-to-Emitter Saturation Voltage 1.9 V I = 10A, V = 15V, T = 150C 5,6,7,9, CE(on) C GE J 2.0 I = 10A, V = 15V, T = 175C 10 ,11 C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 275A GE(th) CE GE C 9,10,11,12 V / TJ Threshold Voltage temp. coefficient -11 mV/C V = V , I = 1.0mA (25C - 175C) GE(th) CE GE C gfe Forward Transconductance 6.9 S V = 50V, I = 10A, PW = 80s CE C I Collector-to-Emitter Leakage Current 25 AV = 0V, V = 600V CES GE CE 8 328 V = 0V, V = 600V, T = 175C GE CE J VFM Diode Forward Voltage Drop 2.5 3.1 V IF = 10A 1.7 I = 10A, T = 175C F J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig 24 Q Total Gate Charge (turn-on) 21 32 I = 10A g C Q Gate-to-Emitter Charge (turn-on) 5.3 8.0 nC V = 15V CT 1 ge GE Q Gate-to-Collector Charge (turn-on) 8.9 13 V = 400V gc CC E Turn-On Switching Loss 29 40 I = 10A, V = 400V, V = 15V on C CC GE CT 4 E Turn-Off Switching Loss 200 281 JR = 22, L = 1.0mH, T = 25C off G J E nergy los s es include tail & diode revers e recovery Etotal Total Switching Loss 229 313 t Turn-On delay time 27 37 I = 10A, V = 400V, V = 15V d(on) C CC GE CT 4 t Rise time 15 23 ns R = 22, L = 1.0mH, T = 25C r G J t Turn-Off delay time 79 90 d(off) t Fall time 21 29 f E Turn-On Switching Loss 99 I = 10A, V = 400V, V = 15V 13,15 on C CC GE CT 4 E Turn-Off Switching Loss 316 JR =22, L=1.0mH, T = 175C off G J E nergy los s es include tail & diode revers e recovery WF 1,WF 2 E Total Switching Loss 415 total 14,16 td(on) Turn-On delay time 27 IC = 10A, VCC = 400V, VGE = 15V t Rise time 16 ns R = 22, L = 1.0mH, T = 175C CT 4 r G J WF 1,WF 2 t Turn-Off delay time 98 d(off) t Fall time 33 f C Input Capacitance 594 pF V = 0V 22 ies GE C Output Capacitance 49 V = 30V oes CC C Reverse Transfer Capacitance 17 f = 1.0Mhz res 4 T = 175C, I = 40A J C CT 2 RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V Rg = 22, V = +15V to 0V GE 22, CT 3 SCSOA Short Circuit Safe Operating Area 5 sV = 400V, Vp =600V CC WF 4 Rg = 22 , V = +15V to 0V GE Erec Reverse Recovery Energy of the Diode 191 JT = 175C 17,18,19 J t Diode Reverse Recovery Time 62 ns V = 400V, I = 10A 20,21 rr CC F I Peak Reverse Recovery Current 16 A V = 15V, Rg = 22, L=1.0mH WF 3 rr GE Notes: V = 80% (V ), V = 15V, L = 28 H, R = 22 . CC CES GE G Pulse width limited by max. junction temperature. % 2 www.irf.com