IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode V = 600V CES C C C C I = 7.0A, T =100C C C E E E C C G t 5s, T = 175C G SC J(max) G G E IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF 2 V typ. = 1.75V IC = 4.0A n-channel CE(ON) D-Pak D Pak TO-220AB Applications G C E Industrial Motor Drive Gate Collector Emitter UPS Solar Inverters Welding Features Benefits Low V and Switching Losses High Efficiency in a Wide Range of Applications CE(ON) 5s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 175C Increased Reliability Positive V Temperature Coefficient Excellent Current Sharing in Parallel Operation CE (ON) Base part number Package Type Standard Pack Orderable Part Number Form Quantity Tube 75 IRGR4607DPbF Tape and Reel 2000 IRGR4607DTRPbF IRGR4607DPbF D-Pak Tape and Reel Left 3000 IRGR4607DTRLPbF Tape and Reel Right 3000 IRGR4607DTRRPbF Tube 50 IRGS4607DPBF 2 IRGS4607DPbF D Pak Tape and Reel Right 800 IRGS4607DTRRPbF Tape and Reel Left 800 IRGS4607DTRLPbF IRGB4607DPbF TO-220AB Tube 50 IRGB4607DPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 11 C C I T = 100C Continuous Collector Current 7.0 C C I Pulse Collector Current, V = 15V 12 CM GE A I Clamped Inductive Load Current, V = 20V 16 LM GE I T = 25C Diode Continuous Forward Current 8.0 F C T = 100C I Diode Continuous Forward Current 5.0 F C I Diode Maximum Forward Current 16 FM Continuous Gate-to-Emitter Voltage 20 V V GE Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 58 D C W P T = 100C Maximum Power Dissipation 29 D C T Operating Junction and -40 to +175 J T Storage Temperature Range STG C Soldering Temperature, for 10 sec. (1.6mm) from case) 300 (0.063 in. Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGR/S/B4607DPbF Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance, Junction-to-Case (IGBT) 2.6 R (IGBT) JC Thermal Resistance, Junction-to-Case (Diode) 8.3 R (Diode) JC Thermal Resistance, Case-to-Sink (flat, greased surface) (TO-220) 0.50 R C/W CS Thermal Resistance, Junction-to-Ambient (PCB Mount) (D-Pak) 50 2 Thermal Resistance, Junction-to-Ambient (PCB Mount) (D -Pak) 40 R JA Thermal Resistance, Junction-to-Ambient (Socket Mount) (TO-220) 62 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 100A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 0.52 V/C V = 0V, I = 100A (25C-175C) V /T GE C (BR)CES J = 4.0A, V = 15V, T = 25C 1.75 2.05 I C GE J 2.15 V I = 4.0A, V = 15V, T = 150C V Collector-to-Emitter Saturation Voltage CE(on) C GE J 2.20 I = 4.0A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 100A GE(th) CE GE C Threshold Voltage Temperature Coeff. -19 mV/C V = V , I =100A (25C-175C) V /T GE(th) J CE GE C gfe Forward Transconductance 2.2 S V = 50V, I = 4.0A, PW = 20s CE C 0.50 25 A V = 0V, V = 600V GE CE I Collector-to-Emitter Leakage Current CES 100 V = 0V, V = 600V, T = 175C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE 1.7 2.3 V I = 4.0A F V Diode Forward Voltage Drop F 1.5 I = 4.0A, T = 175C F J 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 14, 2014