IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE V = 600V CES Features Low VCE (on) Non Punch Through IGBT Technology. I = 7.6A, T =100C C C 10s Short Circuit Capability. G Square RBSOA. t > 10s, T =150C sc J Positive VCE (on) Temperature Coefficient. E Maximum Junction Temperature rated at 175C. V typ. = 2.1V CE(on) Lead-Free n-channel Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. 2 TO-220 D Pak TO-262 IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 Absolute Maximum Ratings Parameter Max. Units Collector-to-Emitter Voltage 600 V V CES I T = 25C Continuous Collector Current 11 C C Continuous Collector Current 7.6 A I T = 100C C C I Pulse Collector Current (Ref.Fig.C.T.5) 22 CM Clamped Inductive Load current I 22 LM Diode Continuous Forward Current 11 I T = 25C F C I T = 100C Diode Continuous Forward Current 6.7 F C I Diode Maximum Forward Current 22 FM Gate-to-Emitter Voltage 20 V V GE P T = 25C Maximum Power Dissipation 63 W D C T = 100C Maximum Power Dissipation 31 P D C Operating Junction and -55 to +175 T J T Storage Temperature Range C STG Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units R Junction-to-Case- IGBT 2.4 C/W JC R Junction-to-Case- Diode 6.1 JC R Case-to-Sink, flat, greased surface 0.50 CS R Junction-to-Ambient 62 JA R Junction-to-Ambient (PCB Mount, steady state) 40 JA WtWeight 1.44g www.irf.com 1 8/30/04IRGB/S/SL4B60KD1PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig. V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 500A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.28 V/C V = 0V, I = 1mA (25C-150C) (BR)CES J GE C = 4.0A, V = 15V, T = 25C 2.1 2.5 I 5,6,7 C GE J V Collector-to-Emitter Voltage 2.5 2.8 V I = 4.0A, V = 15V, T = 150C 9,10,11 CE(on) C GE J 2.6 2.9 I = 4.0A, V = 15V, T = 175C C GE J V V = V , I = 250A Gate Threshold Voltage 3.5 4.5 5.5 V 9,10,11 GE(th) CE GE C V /T Threshold Voltage temp. coefficient -8.1 mV/C V = V , I = 1mA (25C-150C) 12 GE(th) J CE GE C V = 50V, I = 4.0A, PW = 80s gfe Forward Transconductance 1.7 S CE C 1.0 150 V = 0V, V = 600V GE CE I Zero Gate Voltage Collector Current 136 600 A V = 0V, V = 600V, T = 150C CES GE CE J V = 0V, V = 600V, T = 175C 722 2400 GE CE J V Diode Forward Voltage Drop 1.4 2.0 V I = 4.0A 8 FM F 1.3 1.8 I = 4.0A, T = 150C F J I = 4.0A, T = 175C 1.2 1.7 F J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig. Q I = 4.0A Total Gate Charge (turn-on) 12 23 g C Q Gate-to-Emitter Charge (turn-on) 1.7 nC V = 400V CT1 ge CC Q Gate-to-Collector Charge (turn-on) 6.5 V = 15V gc GE E I = 4.0A, V = 400V Turn-On Switching Loss 73 80 CT4 on C CC E Turn-Off Switching Loss 47 53 J V = 15V, R = 100, L = 2.5mH off GE G E Total Switching Loss 120 130 T = 25C tot J t I = 4.0A, V = 400V Turn-On delay time 22 28 d(on) C CC t Rise time 18 23 ns V = 15V, R = 100, L = 2.5mH CT4 r GE G t T = 25C Turn-Off delay time 100 110 d(off) J t Fall time 66 80 f E Turn-On Switching Loss 130 150 I = 4.0A, V = 400V CT4 on C CC E V = 15V, R = 100, L = 2.5mH off Turn-Off Switching Loss 83 140 J GE G 13,15 E Total Switching Loss 220 280 T = 150C WF1,WF2 tot J t Turn-On delay time 22 27 I = 4.0A, V = 400V 14,16 d(on) C CC t V = 15V, R = 100, L = 2.5mH Rise time 18 22 ns CT4 r GE G t Turn-Off delay time 120 130 T = 150C WF1 d(off) J t Fall time 79 89 WF2 f C V = 0V Input Capacitance 190 ies GE C Output Capacitance 25 pF V = 30V 22 oes CC C Reverse Transfer Capacitance 6.2 f = 1.0MHz res T = 150C, I = 22A, Vp = 600V RBSOA Reverse Bias Safe Operating Area FULL SQUARE 4 J C V =500V,V = +15V to 0V,R = 100 CT2 CC GE G T = 150C, Vp = 600V, R = 100 SCSOA Short Circuit Safe Operating Area 10 s CT3 J G V =360V,V = +15V to 0V WF4 CC GE E Reverse Recovery Energy of the Diode 81 100 J T = 150C 17,18,19 rec J t Diode Reverse Recovery Time 93 ns V = 400V, I = 4.0A, L = 2.5mH 20,21 rr CC F I Peak Reverse Recovery Current 6.3 7.9 A V = 15V, R = 100 CT4,WF3 rr GE G Note to are on page 16 2 www.irf.com