IRGB4B60K IRGS4B60K INSULATED GATE BIPOLAR TRANSISTOR IRGSL4B60K Features C V = 600V CES Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability. I = 6.8A, T =100C Square RBSOA. C C Positive VCE (on) Temperature Coefficient. G Maximum Junction Temperature rated at 175C. t > 10s, T =150C sc J E V typ. = 2.1V Benefits n-channel CE(on) Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. 2 D Pak TO-262 TO-220 IRGS4B60K IRGSL4B60K IRGB4B60K Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 12 C C Continuous Collector Current 6.8 A I T = 100C C C I Pulse Collector Current (Ref.Fig.C.T.5) 24 CM I Clamped Inductive Load current 24 LM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 63 W D C P T = 100C Maximum Power Dissipation 31 D C T Operating Junction and -55 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units R Junction-to-Case- IGBT 2.4 C/W JC R Case-to-Sink, flat, greased surface 0.50 CS R Junction-to-Ambient 62 JA R Junction-to-Ambient (PCB Mount, steady state) 40 JA WtWeight 1.44g www.irf.com 1 8/4/03IRGB/S/SL4B60K Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig. V V = 0V, I = 500A Collector-to-Emitter Breakdown Voltage 600 V (BR)CES GE C V / T Temperature Coeff. of Breakdown Voltage 0.28 V/C V = 0V, I = 1mA (25C-150C) (BR)CES J GE C 2.1 2.5 I = 4.0A, V = 15V, T = 25C 5,6,7 C GE J V I = 4.0A, V = 15V, T = 150C Collector-to-Emitter Voltage 2.5 2.8 V 9,10,11 CE(on) C GE J 2.6 2.8 I = 4.0A, V = 15V, T = 175C C GE J V V = V , I = 250A Gate Threshold Voltage 3.5 4.5 5.5 V 9,10,11 GE(th) CE GE C V / T Threshold Voltage temp. coefficient -8.1 mV/C V = V , I = 1mA (25C-150C) 12 GE(th) J CE GE C gfe Forward Transconductance 1.7 S V = 50V, I = 4.0A, PW = 80s CE C V = 0V, V = 600V 1.0 150 GE CE I Zero Gate Voltage Collector Current 54 300 A V = 0V, V = 600V, T = 150C CES GE CE J 300 800 V = 0V, V = 600V, T = 175C GE CE J I V = 20V Gate-to-Emitter Leakage Current 100 nA GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig. Q Total Gate Charge (turn-on) 12 I = 4.0A 23 g C Q V = 400V Gate-to-Emitter Charge (turn-on) 1.7 nC CT1 ge CC Q Gate-to-Collector Charge (turn-on) 6.5 V = 15V gc GE E Turn-On Switching Loss 73 80 I = 4.0A, V = 400V CT4 on C CC E V = 15V, R = 100, L = 2.5mH Turn-Off Switching Loss 47 53 J off GE G E Total Switching Loss 120 130 T = 25C tot J t Turn-On delay time 22 28 I = 4.0A, V = 400V d(on) C CC t V = 15V, R = 100, L = 2.5mH Rise time 18 23 ns CT4 r GE G t Turn-Off delay time 100 110 T = 25C d(off) J t Fall time 66 80 f E I = 4.0A, V = 400V Turn-On Switching Loss 130 150 CT4 on C CC E Turn-Off Switching Loss 83 140 J V = 15V, R = 100, L = 2.5mH 13,15 off GE G E Total Switching Loss 220 280 T = 150C WF1,WF2 tot J t I = 4.0A, V = 400V Turn-On delay time 22 27 14,16 d(on) C CC t Rise time 18 22 ns V = 15V, R = 100, L = 2.5mH CT4 r GE G t T = 150C Turn-Off delay time 120 130 WF1 d(off) J t Fall time 79 89 WF2 f C Input Capacitance 190 V = 0V ies GE C V = 30V Output Capacitance 25 pF 22 oes CC C Reverse Transfer Capacitance 6.2 f = 1.0MHz res RBSOA Reverse Bias Safe Operating Area FULL SQUARE T = 150C, I = 24A, Vp = 600V 4 J C V =500V,V = +15V to 0V,R = 100 CT2 CC GE G SCSOA Short Circuit Safe Operating Area 10 s T = 150C, Vp = 600V, R = 100 CT3 J G V =360V,V = +15V to 0V CC GE WF3 Note to are on page 16 2 www.irf.com