X-On Electronics has gained recognition as a prominent supplier of IRGSL6B60KDPBF IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IRGSL6B60KDPBF IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IRGSL6B60KDPBF Infineon

Name: IRGSL6B60KDPBF
Brand: Infineon
SKU: IRGSL6B60KDPBF_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

IRGSL6B60KDPBF electronic component of Infineon

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Part No.	IRGSL6B60KDPBF
Manufacturer:	Infineon
Category:	IGBT Transistors
Description:	IGBT Transistors 600V UltraFast 10-30kHz
Datasheet:	IRGSL6B60KDPBF Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

IRGSL6B60KDPBF More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 1 Multiples : 1	1 : USD 2.9835 10 : USD 2.4875 50 : USD 2.125 100 : USD 2.0875 1000 : USD 1.992 2500 : USD 1.956	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 5.5821 3 : USD 3.2732 4 : USD 2.1462 24 : USD 1.3816	N/A Obsolete

We are delighted to provide the IRGSL6B60KDPBF from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRGSL6B60KDPBF and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

The IRGSL6B60KDPBF is a high performance isolated Gate Bipolar Transistor (IGBT) module from Infineon. It is designed to be used in applications such as motor drives and motor control. It has a high breakdown voltage of 600V, and a fast switching frequency of between 10 and 30kHz. It has a low Eoff (gate threshold turn-off voltage) and new ultra-low Eoff design which is extremely low gate current and lessens the gate's susceptibility to noise. This IGBT integrates a soft recovery diode, as well as its own heat sink and baseplate to remain nice and cool. This means it can work in extreme temperatures, including in -40C to 125C environments. It is a very reliable and robust product, and it comes with a 3-year manufacturer warranty.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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Manufacturer Infineon Infineon
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Single
Collector- Emitter Voltage VCEO Max 600 V 600 V
Collector-Emitter Saturation Voltage 2 V 2 V
Maximum Gate Emitter Voltage +/- 20 V +/- 20 V
Continuous Collector Current at 25 C 13 A 13 A
Gate-Emitter Leakage Current 100 nA 100 nA
Power Dissipation 90 W 90 W
Package / Case TO - 262 TO - 262
Packaging Tube Tube
Technology Si Si
Mounting Style Through Hole Through Hole
Technology Si Si
Pd - Power Dissipation 90 W 90 W
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Series Rc Rc
Brand Infineon Infineon
Factory Pack Quantity : 50 50
Height 9.65 mm 9.65 mm
Length 11.3 mm 11.3 mm
Width 4.83 mm 4.83 mm
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Igbt Transistors Igbt Transistors
Subcategory Igbts Igbts
Taric 8541290000 8541290000
Tradename Trenchstop Trenchstop