X-On Electronics has gained recognition as a prominent supplier of MMBD 7000 LT1 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. MMBD 7000 LT1 Diodes - General Purpose, Power, Switching are a product manufactured by Infineon. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

MMBD 7000 LT1 Infineon

MMBD 7000 LT1 electronic component of Infineon
MMBD 7000 LT1 Infineon
MMBD 7000 LT1 Diodes - General Purpose, Power, Switching
MMBD 7000 LT1  Semiconductors

Images are for reference only
See Product Specifications
Part No. MMBD 7000 LT1
Manufacturer: Infineon
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching AF DIODE 100V 0.2A
Datasheet: MMBD 7000 LT1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.37 ea
Line Total: USD 0.37 
Availability - 140228
Ship by Fri. 14 Mar to Tue. 18 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
140228
Ship by Fri. 14 Mar to Tue. 18 Mar
MOQ : 1
Multiples : 1
1 : USD 0.37
10 : USD 0.2625
100 : USD 0.1224
1000 : USD 0.066
3000 : USD 0.0583
9000 : USD 0.0462
45000 : USD 0.0418
99000 : USD 0.0385

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Pd - Power Dissipation
Operating Temperature Range
Brand
Factory Pack Quantity :
Height
Length
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Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBD 7000 LT1 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBD 7000 LT1 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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SMBD7000/MMBD7000... Silicon Switching Diode Array For high-speed switching applications 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 SMBD7000/MMBD7000 Type Package Configuration Marking SMBD7000/MMBD7000 SOT23 series s5C Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 100 V Diode reverse voltage V R 100 Peak reverse voltage V RM 200 mA Forward current I F Non-repetitive peak surge forward current I A FSM t = 1 s 4.5 t = 1 s 0.5 330 mW Total power dissipation P tot T 28C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 360 thJS SMBD7000/MMBD7000 1 Pb-containing package may be available upon special request 2 For calculation of R please refer to Application Note Thermal Resistance thJA 1 2007-03-28SMBD7000/MMBD7000... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 100 - - V Breakdown voltage V (BR) I = 100 A (BR) Reverse current I A R V = 50 V - - 0.3 R V = 100 V - - 0.5 R V = 50 V, T = 150 C - - 100 R A mV Forward voltage V F I = 1 mA 550 - 700 F I = 10 mA 670 - 820 F I = 50 mA - - 1000 F I = 100 mA 750 - 1100 F I = 150 mA - - 1250 F AC Characteristics - - 2 pF Diode capacitance C T V = 0 V, f = 1 MHz R Reverse recovery time t - - 4 ns rr I = 10 mA, I = 10 mA, measured at I = 1mA, F R R R = 100 L Test circuit for reverse recovery time D.U.T. Pulse generator: t = 100ns, D = 0.05, t = 0.6ns, p r R = 50 i Oscillograph F Oscillograph: R = 50 , t = 0.35ns, C 1pF r EHN00019 2 2007-03-28

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