MMBD7000LT1XT Infineon

SMBD7000/MMBD7000... Silicon Switching Diode Array For high-speed switching applications 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 SMBD7000/MMBD7000 Type Package Configuration Marking SMBD7000/MMBD7000 SOT23 series s5C Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 100 V Diode reverse voltage V R 100 Peak reverse voltage V RM 200 mA Forward current I F Non-repetitive peak surge forward current I A FSM t = 1 s 4.5 t = 1 s 0.5 330 mW Total power dissipation P tot T 28C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 360 thJS SMBD7000/MMBD7000 1 Pb-containing package may be available upon special request 2 For calculation of R please refer to Application Note Thermal Resistance thJA 1 2007-03-28SMBD7000/MMBD7000... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 100 - - V Breakdown voltage V (BR) I = 100 A (BR) Reverse current I A R V = 50 V - - 0.3 R V = 100 V - - 0.5 R V = 50 V, T = 150 C - - 100 R A mV Forward voltage V F I = 1 mA 550 - 700 F I = 10 mA 670 - 820 F I = 50 mA - - 1000 F I = 100 mA 750 - 1100 F I = 150 mA - - 1250 F AC Characteristics - - 2 pF Diode capacitance C T V = 0 V, f = 1 MHz R Reverse recovery time t - - 4 ns rr I = 10 mA, I = 10 mA, measured at I = 1mA, F R R R = 100 L Test circuit for reverse recovery time D.U.T. Pulse generator: t = 100ns, D = 0.05, t = 0.6ns, p r R = 50 i Oscillograph F Oscillograph: R = 50 , t = 0.35ns, C 1pF r EHN00019 2 2007-03-28