Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comS25FL256L/S25FL128L 256-Mb (32-MB)/128-Mb (16-MB), 3.0 V FL-L Flash Memory General Description The Cypress FL-L Family devices are Flash non-volatile memory products using: Floating Gate technology 65 nm process lithography The FL-L family connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit wide Quad I/O (QIO) and Quad Peripheral Interface (QPI) commands. In addition, there are Double Data Rate (DDR) read commands for QIO and QPI that transfer address and read data on both edges of the clock. The architecture features a Page Programming Buffer that allows up to 256-bytes to be programmed in one operation and provides individual 4KB sector, 32KB half block, 64KB block, or entire chip erase. By using FL-L family devices at the higher clock rates supported, with Quad commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR Flash memories, while reducing signal count dramatically. The FL-L family products offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. Provides an ideal storage solution for systems with limited space, signal connections, and power. These memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM, executing code directly (XIP), and storing re-programmable data. Features Serial Peripheral Interface (SPI) with Multi-I/O Security features Clock polarity and phase modes 0 and 3 Status and Configuration Register Protection Double Data Rate (DDR) option Four Security Regions of 256 bytes each outside the main Flash array Quad peripheral Interface (QPI) option Legacy Block Protection: Block range Extended Addressing: 24- or 32-bit address options Individual and Region Protection Serial Command subset and footprint compatible with S25FL-A, S25FL1-K, S25FL-P, S25FL-S and S25FS-S SPI Individual Block Lock: Volatile individual Sector/Block families Pointer Region: Non-Volatile Sector/Block range Multi I/O Command subset and footprint compatible with Power Supply Lock-down, Password, or Permanent pro- S25FL-P, S25FL-S and S25FS-S SPI families tection of Security Regions 2 and 3 and Pointer Region Read Technology Commands: Normal, Fast, Dual I/O, Quad I/O, DualO, 65 nm Floating Gate Technology QuadO, DDR Quad I/O. Modes: Burst Wrap, Continuous (XIP), QPI Single Supply Voltage with CMOS I/O Serial Flash Discoverable Parameters (SFDP) for configura- 2.7 V to 3.6 V tion information. Temperature Range / Grade Program Architecture Industrial (40 C to +85 C) 256 Bytes Page Programming buffer Industrial Plus (40 C to +105 C) 3.0 V FL-L Flash Memory Automotive, AEC-Q100 Grade 3 (40 C to +85 C) Program suspend and resume Automotive, AEC-Q100 Grade 2 (40 C to +105 C) Erase Architecture Automotive, AEC-Q100 Grade 1 (40 C to +125 C) Uniform 4 KB Sector Erase Packages (all Pb-free) Uniform 32 KB Half Block Erase 8-pin SOIC 208 mil (SOC008) S25FL128L only Uniform 64 KB Block Erase WSON 5 6 mm (WND008) S25FL128L only Chip erase WSON 6 8 mm (WNG008) S25FL256L only Erase suspend and resume 16-pin SOIC 300 mil (SO3016) 100,000 Program/Erase Cycles, minimum BGA-24 6 8 mm 5 5 ball (FAB024) footprint 20 Year Data Retention, minimum 4 6 ball (FAC024) footprint Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-00124 Rev. *H Revised July 11, 2018