S29CD032J S29CD016J S29CL032J S29CL016J 32/16 Mbit, 2.6/3.3 V, Dual Boot, Simultaneous Read/Write, Burst Flash General Description The Cypress S29CD-J and S29CL-J devices are Floating Gate products fabricated in 110-nm process technology. These burst- mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks, using separate data and address pins. These products can operate up to 75 MHz (32 Mb) or 66 MHz (16 Mb), and use a single V CC of 2.5V to 2.75V (S29CD-J) or 3.0V to 3.6V (S29CL-J) that make them ideal for todays demanding automotive applications. Distinctive Characteristics Single 2.6V (S29CD-J) or 3.3V (S29CL-J) for read/program/ Supports Common Flash Interface (CFI) erase Extended Temperature range 110 nm Floating Gate Technology Persistent and Password methods of Advanced Sector Simultaneous Read/Write operation with zero latency Protection x32 Data Bus Unlock Bypass program command to reduce programming time Dual Boot Sector Configuration (top and bottom) ACC input pin to reduce factory programming time Flexible Sector Architecture Data Polling bits indicate program and erase operation CD016J and CL016J: Eight 2k Double word, Thirty 16k Double word, and Eight 2k Double Word sectors completion CD032J and CL032J: Eight 2k Double word, Sixty-two 16k Hardware (WP ) protection of two outermost sectors in the Double Word, and Eight 2k Double Word sectors large bank VersatileI/O control (1.65V to 3.6V) Ready/Busy (RY/BY ) output indicates data available to system Programmable Burst Interface Suspend and Resume commands for Program and Erase Linear for 2, 4, and 8 double word burst with wrap around Operation Secured Silicon Sector that can be either factory or Offered Packages customer locked 80-pin PQFP 20 year data retention (typical) 80-ball Fortified BGA (13 x 11 mm and 11 x 9mm versions) Cycling Endurance: 1 million write cycles per sector (typical) Pb-free package option available Command set compatible with JEDEC (JC42.4) standard Known Good Die Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-00948 Rev. *C Revised November 08, 2017S29CD032J S29CD016J S29CL032J S29CL016J Performance Characteristics Read Access Times Speed Option (MHz) 75 (32 Mb only) 66 56 40 Max Asynch. Access Time, ns (t)54545454 ACC Max Synch. Burst Access, ns (t)8888 BACC Min Initial Clock Delay (clock cycles) 5 5 5 4 Max CE Access Time, ns (t)54545454 CE Max OE Access time, ns (t)20202020 OE Current Consumption (Max values) Continuous Burst Read 75 MHz 90 mA Program 50 mA Erase 50 mA Standby Mode 60 A Typical Program and Erase Times Double Word Programming 18 s Sector Erase 1.0 s Notice for the 32Mb S29CD-J and S29CL-J devices only: Refer to the application note Recommended Mode of Operation for Cypress 110 nm S29CD032J/S29CL032J Flash Memory publication number S29CD-CL032J Recommend AN for programming best practices. Document Number: 002-00948 Rev. *C Page 2 of 74