S29GL01GS/S29GL512S S29GL256S/S29GL128S 1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/ 256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte), 3.0 V, GL-S Flash Memory General Description The Cypress S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for todays embedded applications that require higher density, better performance and lower power consumption. Distinctive Characteristics CMOS 3.0 Volt Core with Versatile I/O Advanced Sector Protection (ASP) Volatile and non-volatile protection methods for each 65 nm MirrorBit Eclipse Technology sector Single supply (V ) for read / program / erase (2.7V to 3.6V) CC Separate 1024-byte One Time Program (OTP) array with two Versatile I/O Feature lockable regions Wide I/O voltage range (V ): 1.65V to V IO CC Common Flash Interface (CFI) parameter table x16 data bus Temperature Range / Grade Asynchronous 32-byte Page read Industrial (-40C to +85C) 512-byte Programming Buffer Industrial Plus(-40C to +105C) Programming in Page multiples, up to a maximum of 512 Automotive, AEC-Q100 Grade 3 (-40 C to +85 C) bytes Automotive, AEC-Q100 Grade 2 (-40 C to +105 C) Single word and multiple program on same word options 100,000 Program / Erase Cycles Automatic Error Checking and Correction (ECC) internal 20 Years Data Retention hardware ECC with single bit error correction Packaging Options Sector Erase 56-pin TSOP Uniform 128-kbyte sectors 64-ball LAA Fortified BGA, 13 mm x 11 mm Suspend and Resume commands for Program and Erase 64-ball LAE Fortified BGA, 9 mm x 9 mm operations 56-ball VBU Fortified BGA, 9 mm x 7 mm Status Register, Data Polling, and Ready/Busy pin methods to determine device status Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-98285 Rev. *M Revised June 16, 2017S29GL01GS/S29GL512S S29GL256S/S29GL128S Performance Summary Maximum Read Access Times Random Access Page Access Time CE Access Time OE Access Time Density Voltage Range Time (t ) (t ) (t ) (t ) ACC PACC CE OE Full V = V 90 15 90 25 CC IO 128 Mb VersatileIO V 10025100 35 IO Full V = V 90 15 90 25 CC IO 256 Mb VersatileIO V 10025100 35 IO Full V = V 10015100 25 CC IO 512 Mb VersatileIO V 11025110 35 IO Full V = V 10015100 25 CC IO 1 Gb VersatileIO V 11025110 35 IO Typical Program and Erase Rates Buffer Programming 1.5 MB/s (512 bytes) Sector Erase (128 kbytes) 477 kB/s Maximum Current Consumption Active Read at 5 MHz, 30 pF 60 mA Program 100 mA Erase 100 mA Standby 100 A Document Number: 001-98285 Rev. *M Page 3 of 107