S29GL128P11FFIS40 Infineon

S29GL01GP S29GL512P S29GL256P S29GL128P 1 Gbit, 512, 256, 128 Mbit, 3 V, Page Flash with 90 nm MirrorBit Process Technology General Description The Cypress S29GL01G/512/256/128P are Mirrorbit Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for todays embedded applications that require higher density, better performance and lower power consumption. Distinctive Characteristics Single 3V read/program/erase (2.7-3.6 V) 20-year data retention typical Enhanced VersatileI/O control Offered Packages All input levels (address, control, and DQ input levels) and 56-pin TSOP outputs are determined by voltage on V input. V range is 1.65 64-ball Fortified BGA IO IO to V CC Suspend and Resume commands for Program and Erase 90 nm MirrorBit process technology operations 8-word/16-byte page read buffer Write operation status bits indicate program and erase operation completion 32-word/64-byte write buffer reduces overall programming time for multiple-word updates Unlock Bypass Program command to reduce programming time Secured Silicon Sector region Support for CFI (Common Flash Interface) 128-word/256-byte sector for permanent, secure identification Persistent and Password methods of Advanced Sector Protection through an 8-word/16-byte random Electronic Serial Number WP#/ACC input Can be programmed and locked at the factory or by the Accelerates programming time (when V is applied) for greater HH customer throughput during system production Uniform 64 Kword/128 Kbyte Sector Architecture Protects first or last sector regardless of sector protection S29GL01GP: One thousand twenty-four sectors settings S29GL512P: Five hundred twelve sectors Hardware reset input (RESET#) resets device S29GL256P: Two hundred fifty-six sectors Ready/Busy# output (RY/BY#) detects program or erase cycle S29GL128P: One hundred twenty-eight sectors completion 100,000 erase cycles per sector typical Performance Characteristics Maximum Read Access Times (ns) Random Access Page Access Time CE# Access Time OE# Access Time Density Voltage Range (1) Time (t ) (t ) (t ) (t ) ACC PACC CE OE Regulated V 90 90 CC 128 & 256 Mb Full V 100/110 25 100/110 25 CC VersatileIO V 110 110 IO Regulated V 100 100 CC 512 Mb Full V 110 25 110 25 CC VersatileIO V 120 120 IO Regulated V 110 110 CC 1 Gb Full V 120 25 120 25 CC VersatileIO V 130 130 IO Notes 1. Access times are dependent on V and V operating ranges. CC IO See Ordering Information page for further details. Regulated V : V = 3.03.6 V. CC CC Full V : V = V = 2.73.6 V. CC CC IO VersatileIO V : V = 1.65V , V = 2.73.6 V. IO IO CC CC 2. Contact a sales representative for availability. Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-00886 Rev. *B Revised May 22, 2017S29GL01GP S29GL512P S29GL256P S29GL128P Current Consumption (typical values) Random Access Read (f = 5 MHz) 30 mA 8-Word Page Read (f = 10 MHz) 1 mA Program/Erase 50 mA Standby 1 A Program & Erase Times (typical values) Single Word Programming 60 s Effective Write Buffer Programming (V ) Per Word 15 s CC Effective Write Buffer Programming (V ) Per Word 13.5 s HH Sector Erase Time (64 Kword Sector) 0.5 s Document Number: 002-00886 Rev. *B Page 2 of 83