S29GL01GP
S29GL512P
S29GL256P
S29GL128P
1 Gbit, 512, 256, 128 Mbit, 3 V, Page Flash
with 90 nm MirrorBit Process Technology
General Description
The Cypress S29GL01G/512/256/128P are Mirrorbit Flash products fabricated on 90 nm process technology. These devices
offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that
allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than
standard programming algorithms. This makes these devices ideal for todays embedded applications that require higher density,
better performance and lower power consumption.
Distinctive Characteristics
Single 3V read/program/erase (2.7-3.6 V) 20-year data retention typical
Enhanced VersatileI/O control Offered Packages
All input levels (address, control, and DQ input levels) and 56-pin TSOP
outputs are determined by voltage on V input. V range is 1.65
64-ball Fortified BGA
IO IO
to V
CC
Suspend and Resume commands for Program and Erase
90 nm MirrorBit process technology
operations
8-word/16-byte page read buffer
Write operation status bits indicate program and erase operation
completion
32-word/64-byte write buffer reduces overall programming time for
multiple-word updates
Unlock Bypass Program command to reduce programming time
Secured Silicon Sector region
Support for CFI (Common Flash Interface)
128-word/256-byte sector for permanent, secure identification
Persistent and Password methods of Advanced Sector Protection
through an 8-word/16-byte random Electronic Serial Number
WP#/ACC input
Can be programmed and locked at the factory or by the
Accelerates programming time (when V is applied) for greater
HH
customer
throughput during system production
Uniform 64 Kword/128 Kbyte Sector Architecture
Protects first or last sector regardless of sector protection
S29GL01GP: One thousand twenty-four sectors
settings
S29GL512P: Five hundred twelve sectors
Hardware reset input (RESET#) resets device
S29GL256P: Two hundred fifty-six sectors
Ready/Busy# output (RY/BY#) detects program or erase cycle
S29GL128P: One hundred twenty-eight sectors
completion
100,000 erase cycles per sector typical
Performance Characteristics
Maximum Read Access Times (ns)
Random Access Page Access Time CE# Access Time OE# Access Time
Density Voltage Range (1)
Time (t ) (t ) (t ) (t )
ACC PACC CE OE
Regulated V 90 90
CC
128 & 256 Mb Full V 100/110 25 100/110 25
CC
VersatileIO V 110 110
IO
Regulated V 100 100
CC
512 Mb Full V 110 25 110 25
CC
VersatileIO V 120 120
IO
Regulated V 110 110
CC
1 Gb Full V 120 25 120 25
CC
VersatileIO V 130 130
IO
Notes
1. Access times are dependent on V and V operating ranges.
CC IO
See Ordering Information page for further details.
Regulated V : V = 3.03.6 V.
CC CC
Full V : V = V = 2.73.6 V.
CC CC IO
VersatileIO V : V = 1.65V , V = 2.73.6 V.
IO IO CC CC
2. Contact a sales representative for availability.
Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document Number: 002-00886 Rev. *B Revised May 22, 2017S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Current Consumption (typical values)
Random Access Read (f = 5 MHz) 30 mA
8-Word Page Read (f = 10 MHz) 1 mA
Program/Erase 50 mA
Standby 1 A
Program & Erase Times (typical values)
Single Word Programming 60 s
Effective Write Buffer Programming (V ) Per Word 15 s
CC
Effective Write Buffer Programming (V ) Per Word 13.5 s
HH
Sector Erase Time (64 Kword Sector) 0.5 s
Document Number: 002-00886 Rev. *B Page 2 of 83