Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comS29GL01GS, S29GL512S S29GL256S, S29GL128S Military 1 Gbit (128 Mbyte), 512 Mbit (64 Mbyte), 256 Mbit (32 Mbyte), 128 Mbit (16 Mbyte), 3.0 V GL-S Flash Memory S29GL01GS, S29GL512S, S29GL256S, S29GL128S, Military 1 Gbit (128 Mbyte), 512 Mbit (64 Mbyte), 256 Mbit (32 Mbyte), 128 Mbit (16 Mbyte), 3.0 V GL-S Flash Memory General Description The Cypress S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a page access time as fast as 15 ns with a corresponding random access time of 120 ns. They feature a Write Buffer, which allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for todays embedded applications that require higher density, better performance, and lower power consumption. Suspend and Resume commands for Program and Erase Distinctive Characteristics operations CMOS 3.0 V core with Versatile I/O Status Register, Data Polling, and Ready/Busy pin methods to determine device status 65 nm MirrorBit Eclipse technology Advanced Sector Protection (ASP) Single supply (V ) for read/program/erase (2.7 V to 3.6 V) CC Volatile and nonvolatile protection methods for each sector Versatile I/O feature Wide I/O voltage range (V ): 1.65 V to V IO CC Separate 1024-byte One Time Program (OTP) array with two lockable regions x16 data bus Common Flash Interface (CFI) parameter table Asynchronous 32-byte page read Temperature range and grade 512-byte programming buffer Military (55 C to +125 C) Programming in page multiples, up to a maximum of 512 bytes 100 Program and Erase cycles Single word and multiple program on same word options 20 years data retention Automatic Error Checking and Correction (ECC) internal Packaging options hardware ECC with single bit error correction 56-pin TSOP Sector erase 64-ball LAA Fortified BGA, 13 mm x 11 mm Uniform 128-kbyte sectors 64-ball LAE Fortified BGA, 9 mm x 9 mm Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-18741 Rev. *A Revised May 29, 2020