Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comS29JL064J 64-Mb (8M 8-Bit/4M 16-Bit), 3 V, Simultaneous Read/Write Flash 64-Mb (8M 8-Bit/4M 16-Bit), 3 V, Simultaneous Read/Write Flash Distinctive Characteristics Ultra low power consumption (typical values) Architectural Advantages 2 mA active read current at 1 MHz Simultaneous Read/Write operations 10 mA active read current at 5 MHz Data can be continuously read from one bank while 200 nA in standby or automatic sleep mode executing erase/program functions in another bank Zero latency between read and write operations Cycling endurance: 1 million cycles per sector typical Flexible bank architecture Data retention: 20 years typical Read may occur in any of the three banks not being Software Features programmed or erased Supports Common Flash Memory Interface (CFI) Four banks may be grouped by customer to achieve desired bank divisions Erase suspend/erase resume Suspends erase operations to read data from, or program Boot sectors data to, a sector that is not being erased, then resumes the Top and bottom boot sectors in the same device erase operation Any combination of sectors can be erased Data polling and toggle bits Manufactured on 0.11 m Process Technology Provides a software method of detecting the status of Secured Silicon Region: Extra 256-byte sector program or erase operations Factory locked and identifiable: 16 bytes available for Unlock bypass program command secure, random factory Electronic Serial Number Reduces overall programming time when issuing multiple verifiable as factory locked through autoselect function program command sequences Customer lockable: One-time programmable only. Once locked, data cannot be changed Hardware Features Zero power operation Ready/Busy output (RY/BY ) Sophisticated power management circuits reduce power Hardware method for detecting program or erase cycle consumed during inactive periods to nearly zero completion Compatible with JEDEC standards Hardware reset pin (RESET ) Pinout and software compatible with single-power-supply Hardware method of resetting the internal state machine to flash standard the read mode WP /ACC input pin Package Options Write protect (WP ) function protects sectors 0, 1, 140, 48-ball Fine-pitch BGA and 141, regardless of sector protect status 48-pin TSOP Acceleration (ACC) function accelerates program timing Performance Characteristics Sector Protection High performance Hardware method to prevent any program or erase operation within a sector Access time as fast as 55 ns Temporary Sector Unprotect allows changing data in Program time: 7 s/word typical using accelerated protected sectors in-system programming function General Description The S29JL064J is a 64 Mb, 3.0 volt-only flash memory device, organized as 4,194,304 words of 16 bits each or 8,388,608 bytes of 8 bits each. Word mode data appears on DQ15DQ0 byte mode data appears on DQ7DQ0. The device is designed to be programmed in-system with the standard 3.0 volt V supply, and can also be programmed in standard EPROM programmers. The CC device is available with an access time of 55, 60, 70 ns and is offered in a 48-ball FBGA or 48-pin TSOP package. Standard control pinschip enable (CE ), write enable (WE ), and output enable (OE )control normal read and write operations, and avoid bus contention issues. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-00856 Rev. *J Revised October 17, 2019