S29VS064R S29XS064R 64-Mbit (4M 16-bit), 1.8 V, Multiplexed, Burst MirrorBit Flash Distinctive Characteristics Single 1.8 V read, program and erase (1.7 to 1.95 V) Security Features VersatileIO Feature Dynamic Protection Bit (DYB) Device generates data output voltages and tolerates data A command sector protection method to lock combinations input voltages as determined by the voltage on the V of individual sectors to prevent program or erase CCQ pin operations within that sector 1.8 V compatible I/O signals Sectors can be locked and unlocked in-system at V level CC Address and Data Interface Options Hardware Sector Protection Address and Data Multiplexed for reduced I/O count All sectors locked when V = V PP IL (ADM) S29VS-R Handshaking feature Address-High, Address-Low, Data Multiplexed for minimum Provides host system with minimum possible latency by I/O count (AADM) S29XS-R monitoring RDY Simultaneous Read/Write operation Supports Common Flash Memory Data can be continuously read from one bank while Interface (CFI) executing erase/program functions in other bank Manufactured on 65 nm MirrorBit process technology Zero latency between read and write operations Cycling endurance: 100,000 cycles per sector typical Burst length Data retention: 10 years typical Continuous linear burst Data Polling and toggle bits 8/16 word linear burst with wrap around Provides a software method of detecting program and Secured Silicon Sector region erase operation completion 256 words accessible through a command sequence, 128 Erase Suspend/Resume words for the Factory Secured Silicon Sector and 128 Suspends an erase operation to read data from, or words for the Customer Secured Silicon Sector. program data to, a sector that is not being erased, then Sector Architecture resumes the erase operation Four 8 kword sectors in upper-most address range Program Suspend/Resume One hundred twenty-seven 32 kword sectors Suspends a programming operation to read data from a Four banks sector other than the one being programmed, then resume the programming operation Packages 44-ball Very Thin FBGA Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-00949 Rev. *K Revised August 07, 2018S29VS064R S29XS064R Performance Characteristics Read Access Times Speed Option (MHz) 108 Max. Synch. Latency, ns (t 80 IACC) Max. Synch. Burst Access, ns (t 7.6 BACC) Max. Asynch. Access Time, ns (t)80 ACC Max OE Access Time, ns (t)15 OE Current Consumption (typical values) Continuous Burst Read 108 MHz 32 mA Simultaneous Operation 108 MHz 71 mA Program/Erase 30 mA Standby Mode 20 A Typical Program and Erase Times Single Word Programming 170 s Effective Write Buffer Programming (V ) Per Word 14.1 s CC Effective Write Buffer Programming (V ) Per Word 9 s PP Sector Erase (8 kword Sector) 350 ms Sector Erase (32 kword Sector) 800 ms Document Number: 002-00949 Rev. *K Page 2 of 70