S29VS256R S29VS128R S29XS256R S29XS128R 256/128-Mbit (32/16 Mbyte), 1.8 V, 16-bit Data Bus, Multiplexed MirrorBit Flash Features Single 1.8 V supply for read/program/erase (1.701.95 V) 10-year data retention (typical) 65nm MirrorBit Technology Cycling Endurance: 100,000 cycles per sector (typical) Address and Data Interface Options RDY output indicates data available to system Address and Data Multiplexed for reduced I/O count Command set compatible with JEDEC (42.4) standard (ADM) S29VS-R Hardware sector protection via V pin PP Address-High, Address-Low, Data Multiplexed for minimum Handshaking by monitoring RDY I/O count (AADM) S29XS-R Offered Packages Simultaneous Read/Write operation 44-ball FBGA (6.2 mm 7.7 mm 1.0 mm) 32-word Write Buffer Low V write inhibit CC Bank architecture Write operation status bits indicate program and erase Eight-bank operation completion Four 32-KB sectors at the top or bottom of memory array Suspend and Resume commands for Program and Erase 255/127 of 128-KB sectors operations Programmable linear (8/16-word) with wrap around and Asynchronous program operation, independent of burst continuous burst read modes control register settings Secured Silicon Sector region consisting of 128 words each V input pin to reduce factory programming time PP for factory and customer Support for Common Flash Interface (CFI) General Description The Cypress S29VS256/128R and S29XS256/128R are MirrorBit Flash products fabricated on 65nm process technology. These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using multiplexed data and address pins. These products can operate up to 108 MHz and use a single V of 1.7 V to 1.95 V CC that makes them ideal for the demanding wireless applications of today that require higher density, better performance, and lowered power consumption. The S29VS256/128R operates in ADM mode, while the S29XS256/128R can operate in the AADM mode. Performance Characteristics Read Access Times Current Consumption (typical values) Speed Option (MHz) 108 Continuous Burst Read 108 MHz 32 mA Max. Synch. Latency, ns (t 72.34 Simultaneous Operation 108 MHz 71 mA IA) Max. Synch. Burst Access, ns (t 6.75 Program/Erase 30 mA BACC) Max. Asynch. Access Time, ns (t)80 Standby Mode 30 A ACC Max OE Access Time, ns (t)15 OE Typical Program & Erase Times Single Word Programming 170 s Effective Write Buffer Programming (V ) Per CC 14.1 s Word Effective Write Buffer Programming (V ) Per PP 9 s Word Sector Erase (16 Kword Sector) 350 ms Sector Erase (64 Kword Sector) 800 ms Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-00833 Rev. *K Revised August 09, 2018S29VS256R S29VS128R S29XS256R S29XS128R Contents Ordering Information ............................................................ 3 Hardware Data Protection Methods ......................................40 SSR Lock ...............................................................................40 Valid Combinations ................................................................. 3 Secure Silicon Region ...........................................................40 Input/Output Descriptions and Logic Symbol ................... 4 Power Conservation Modes ...............................................42 Block Diagram ...................................................................... 5 Standby Mode .......................................................................42 Physical Dimensions/Connection Diagrams ..................... 6 Automatic Sleep Mode ..........................................................42 Related Documents ................................................................ 6 Output Disable (OE ) ............................................................42 Special Handling Instructions for FBGA Package .................. 6 Electrical Specifications .....................................................43 Product Overview ................................................................. 8 Absolute Maximum Ratings ...................................................43 Operating Ranges .................................................................44 Address Space Maps ........................................................... 9 DC Characteristics .................................................................44 Data Address and Quantity Nomenclature ........................... 10 Capacitance ...........................................................................45 Flash Memory Array ............................................................. 11 AC Test Conditions ................................................................46 Address/Data Interface ......................................................... 13 Key to Switching Waveforms .................................................46 Bus Operations ..................................................................... 14 V Power-Up and Power Down ...........................................47 CC Device ID and CFI (ID-CFI) .................................................. 15 CLK Characterization ............................................................48 Device Operations .............................................................. 17 AC Characteristics .................................................................49 Asynchronous Read ............................................................. 17 Appendix ..............................................................................57 Synchronous (Burst) Read Mode Command Definitions ............................................................57 and Configuration Register .......................................... 18 Device ID and Common Flash Memory Interface Status Register ..................................................................... 25 Address Map .................................................................59 Blank Check ......................................................................... 29 Simultaneous Read/Write ..................................................... 29 Revision History ..................................................................72 Writing Commands/Command Sequences .......................... 30 Document History Page ......................................................72 Program/Erase Operations ................................................... 30 Sales, Solutions, and Legal Information ...........................74 Handshaking ......................................................................... 37 Worldwide Sales and Design Support ............................74 Hardware Reset .................................................................... 37 Products .........................................................................74 Software Reset ..................................................................... 37 PSoC Solutions ...........................................................74 Cypress Developer Community ......................................74 Sector Protection/Unprotection ........................................ 39 Technical Support ..........................................................74 Sector Lock/Unlock Command ............................................. 39 Sector Lock Range Command ............................................. 39 Document Number: 002-00833 Rev. *K Page 2 of 74