Spansion, Inc andCypress Semiconductor Corp have merged together to deliver high-performance, high-quality solutions at the heart of today s most advanced embedded systems, from automotive, industrial and networking platforms to highly interactive consumer and mobile devices. The new company Cypress Semiconductor Corp will continue to offerSpansion, Inc products to new and existing customers. Continuity of Specifications There is no change to this document as a result of offering the device as a Cypress product. Any changes that have been made are the result of normal document improvements and are noted in the document history page, where supported. Future revisions will occur when appropriate, and changes will be noted in a document history page. Continuity of Ordering Part Numbers Cypress continues to support existing part numbers. To order these products, please use only the Ordering Part Numbers listed in this document. For More Information Please contact your local sales office for additional information about Cypress products and solutions.ADVANCE S29WS064R 64 Mbit (4M x 16-bit), 1.8 V MirrorBit Flash Distinctive Characteristics Single 1.8-Volt read, program and erase (1.70V - 1.95V) Command set compatible with JEDEC (42.4) standard 65 nm MirrorBit process technology Dynamic Protection Bit (DYB) A command sector protection method to lock combinations of VersatileIO Feature individual sectors to prevent program or erase operations within Device generates data output voltages and tolerates data input that sector voltages as determined by the voltage on the V pin IO Sectors can be locked and unlocked in-system at V level 1.8 V compatible I/O signals CC Hardware Sector Protection Simultaneous Read/Write operation All sectors locked when ACC input is V Data can be continuously read from one bank while executing IL Low V write inhibit erase/program functions in other bank CC Zero latency between read and write operations Handshaking feature Provides host system with minimum possible latency by Burst length monitoring RDY Continuous linear burst Supports Common Flash Memory Interface (CFI) 8-word/16-word linear burst with wrap around Cycling Endurance: 100,000 cycles per sector (typical) Asynchronous Page Mode 8-word page Data retention: 10 years (typical) Page access time of 20 ns Data Polling and toggle bits 32-word write buffer reduces overall programming time for multiple- Provides a software method of detecting program and erase word updates operation completion Sector Architecture Suspend and Resume commands for Program and Erase operations Four 8-kword sectors in upper most address range One hundred twenty seven 32-kwords sectors Synchronous or Asynchronous program operation, independent of burst control register settings Four banks Top or Bottom boot sector configuration ACC input pin to reduce factory programming time Secured Silicon Sector region Offered Packages 256 words accessible through a command sequence, 128 words 84-ball FBGA (8 mm x 11.6 mm) for the Factory Secured Silicon Sector and 128 words for the Customer Secured Silicon Sector Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-00755 Rev. *F Revised October 08, 2015