SGB10N60A Fast IGBT in NPT-technology C 75% lower E compared to previous generation off combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-263-3-2 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : SGB10N60A Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 1.35 K/W thJC junction case Thermal resistance, R 40 thJA 1) junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V 600 - - V (BR)CES V =0V, I =500A GE C Collector-emitter saturation voltage V V = 15V, I =10A CE(sat) GE C 1.7 2 2.4 T =25C j - 2.3 2.8 T =150C j Gate-emitter threshold voltage V 3 4 5 I =300A,V =V GE(th) C CE GE Zero gate voltage collector current I V =600V,V =0V A CES CE GE T =25C - - 40 j - - 1500 T =150C j I V =0V,V =20V Gate-emitter leakage current - - 100 nA GES CE GE g V =20V, I =10A Transconductance - 6.7 - S fs CE C Dynamic Characteristic C V =25V, Input capacitance - 550 660 pF iss CE C V =0V, Output capacitance GE - 62 75 oss f=1MHz Reverse transfer capacitance C - 42 51 rss Q V =480V, I =10A Gate charge - 52 68 nC Gate CC C V =15V GE Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 2) I Short circuit collector current V =15V,t 10s - 100 - A C(SC) GE SC V 600V, CC T 150C j 1) 2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.3 July 07