SGP10N60A SGW10N60A Fast IGBT in NPT-technology C 75% lower E compared to previous generation off combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-220-3-1 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : SGP10N60A SGW10N60A Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 1.35 K/W thJC junction case Thermal resistance, R PG-TO-220-3-1 62 thJA junction ambient PG-TO-247-3-21 40 Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V 600 - - V V =0V, I =500 A (BR)CES GE C Collector-emitter saturation voltage V V = 15V, I =10A CE(sat) GE C 1.7 2 2.4 T =25C j - 2.3 2.8 T =150C j Gate-emitter threshold voltage V 3 4 5 I =300 A,V =V GE(th) C CE GE Zero gate voltage collector current I V =600V,V =0V A CES CE GE T =25C - - 40 j - - 1500 =150C T j Gate-emitter leakage current I V =0V,V =20V - - 100 nA GES CE GE Transconductance g V =20V, I =10A - 6.7 - S fs CE C Dynamic Characteristic Input capacitance C - V =25V, 550 660 pF iss CE V =0V, Output capacitance C - 62 75 oss GE f=1MHz Reverse transfer capacitance C - 42 51 rss Gate charge Q V =480V, I =10A - 52 68 nC Gate CC C V =15V GE Internal emitter inductance L PG-TO-220-3-1 - 7 - nH E measured 5mm (0.197 in.) from case PG-TO-247-3-21 - 13 - 2) Short circuit collector current I V =15V,t 10 s - 100 - A C(SC) GE SC V 600V, CC T 150C j 2) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.4 Sep 08