Technische Information / technical information Sanftanlauf-Modul sTT2200N18P55 Soft Starter Module Key Parameters V / V 1800 V DRM RRM I 2180 A overload(21s) I 21000 A TSM V 0,9 V T0 r 0,24 m T R 0,082 K/W thJA (21s) Merkmale Features Druckkontakt-Technologie fr hohe Zuverlssigkeit Pressure contact technology for high reliability Advanced Medium Power Technology (AMPT) Advanced Medium Power Technology (AMPT) Integrierter optimierter Khlkrper Integrated optimized heatsink Typische Anwendungen Typical Applications Sanftanlasser Soft starter Bypass-Schalter Bypass switch Leistungssteller Power controller Statischer Umschalter Static switch content of customer DMX code DMX code DMX code digit digit quantity serial number 1..5 5 SAP material number 6..12 7 Internal production order number 13..20 8 datecode (production year) 21..22 2 www.ifbip.com datecode (production week) 23..24 2 support infineon-bip.com Date of Publication 2020-04-01 Revision: 3.1 Seite/page 1/9 Technische Information / technical information Sanftanlauf-Modul sTT2200N18P55 Soft Starter Module Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values *1.) 1800 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = +25C... T V , vj vj max DRM V repetitive peak forward off-state and reverse voltages RRM 1850 V Vorwrts- und Rckwrts Stospitzensperrspannung T = +25C... T V , vj vj max DSM VRSM non-repetitive peak forward off-state and reverse voltage berlaststrom W1C sin.180 t = 21s I 2180 A overload overload T =155C T =40C overload current vj vjstart Stostrom-Grenzwert T = 25C, t = 10ms I 21.000 A vj P TSM 17.500 surge current T = T , t = 10ms A vj vj max P Grenzlastintegral T = 25C, t = 10ms It 2.205.000 As vj P It-value T = T , t = 10ms 1.531.250 As vj vj max P Kritische Stromsteilheit DIN IEC 747-6 (di /dt) 250 A/s T cr critical rate of rise of on-state current f = 50Hz, i = 1A, di /dt = 1A/s GM G Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) 1000 V/s vj vj max D DRM D cr th critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F *1.) Reduktionsfaktor von -0,1% pro K fr T kleiner 25 C vj Derating factor of -0,1% per K for T below 25 C vj Charakteristische Werte / Characteristic values 1,38 V Durchlaspannung T = T , i = 2000 A v max. vj vj max T T on-state voltage max. 0,9 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 0,24 m Ersatzwiderstand T = T r vj vj max T slope resistance Zndstrom T = 25C, v = 12V I max. 200 mA vj D GT gate trigger current Zndspannung T = 25C, v = 12V V max. 2 V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 12V I max. 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,2 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V, R = 1 I max. 300 mA vj D A H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 1200 mA vj D GK L latching current i = 1A, di /dt = 1A/s, t = 20s GM G g Vorwrts- und Rckwrts-Sperrstrom W1C T = T i + i max. 240 mA vj vj max D R forward off-state and reverse current W1C v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 3 s gd gate controlled delay time T = 25C, i = 1A, di /dt = 1A/s vj GM G prepared by: JS date of publication: 2020-04-01 approved by: MS revision: 3.1 Date of Publication 2020-04-01 Revision: 3.1 Seite/page 2/9