X-On Electronics has gained recognition as a prominent supplier of TD142N16KOF Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. TD142N16KOF Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

TD142N16KOF Infineon

TD142N16KOF electronic component of Infineon
Images are for reference only
See Product Specifications
Part No.TD142N16KOF
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Module; double series; 1.6kV; 142A; BG-PB34-1; Ufmax:1.56V; screw
Datasheet: TD142N16KOF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 152.2135
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 121.0509
N/A

Obsolete
   
Manufacturer
Product Category
Case
Mounting
Semiconductor Structure
Electrical Mounting
Type Of Module
Max Forward Impulse Current
Max Forward Voltage
Max Load Current
Max Off-State Voltage
Gate Current
Load Current
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We are delighted to provide the TD142N16KOF from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TD142N16KOF and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Datenblatt / Data sheet N Netz-Thyristor-Modul TT142N Phase Control Thyristor Module TT142N TD142N DT142N TT142N...-K TD142N...-A Kenndaten Elektrische Eigenschaften / Electrical properties Elektrische Eigenschaften Hchstzulssige Werte / Maximum rated values 1200 1400 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM 1600 V repetitive peak forward off-state and reverse voltages 1200 1400 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM 1600 V non-repetitive peak forward off-state voltage 1300 1500 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM 1700 V non-repetitive peak reverse voltage 230 A Durchlastrom-Grenzeffektivwert I TRMSM maximum RMS on-state current 142 A Dauergrenzstrom T = 85C I C TAVM average on-state current 4800 A Stostrom-Grenzwert T = 25 C, t = 10 ms I vj P TSM 4100 A surge current T = T , t = 10 ms vj vj max P 115000 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 84000 As It-value T = T , t = 10 ms vj vj max P DIN IEC 747-6 f = 50 Hz, 150 A/s Kritische Stromsteilheit (di /dt) T cr i = 0,6 A, di /dt = 0,6 A/s GM G critical rate of rise of on-state current Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th 1000 V/s critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values Durchlaspannung T = T , i = 500 A v max. 1,56 V vj vj max T T on-state voltage Schleusenspannung T = T V 0,9 V vj vj max (TO) threshold voltage Ersatzwiderstand T = T r 1,1 m vj vj max T slope resistance Zndstrom T = 25C, v = 6 V I max. 150 mA vj D GT gate trigger current Zndspannung T = 25C, v = 6 V V max. 2V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 6 V I max. 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,25 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 6 V, R = 5 I max. 200 mA vj D A H holding current Einraststrom T = 25C, v = 6 V, R 10 I max. 800 mA vj D GK L latching current i = 0,6 A, di /dt = 0,6 A/s, GM G t = 20 s g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 30 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 T = 25 C, t max. 3 s vj gd gate controlled delay time i = 0,6 A, di /dt = 0,6 A/s GM G prepared by: C.Drilling date of publication: 03.07.02 approved by: J. Novotny revision: 1 BIP AC / 22 Nov , A.Rther A70 / 95 Seite/page 1/12Datenblatt / Data sheet N Netz-Thyristor-Modul TT142N Phase Control Thyristor Module Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Freiwerdezeit T = T , i = I t vj vj max TM TAVM q circuit commutated turn-off time v = 100 V, v = 0,67 V RM DM DRM dv /dt = 20 V/s, -di /dt = 10 A/s D T th 5.Kennbuchstabe / 5 letter O typ. 200 s Isolations-Prfspannung RMS, f = 50 Hz, t = 1 min V 2,5 kV ISOL insulation test voltage RMS, f = 50 Hz, t = 1 sec kV 3,0 Thermische Eigenschaften / Thermal properties Thermische Eigenschaften pro Modul / per Module, = 180 sin R max. 0,110 C/W Innerer Wrmewiderstand thJC pro Zweig / per arm, = 180 sin max. 0,220 C/W thermal resistance, junction to case pro Modul / per Module, DC max. 0,106 C/W pro Zweig / per arm, DC max. 0,212 C/W pro Modul / per Module max. 0,03 C/W bergangs-Wrmewiderstand R thCH max. 0,06 pro Zweig / per arm C/W thermal resistance, case to heatsink 125 C Hchstzulssige Sperrschichttemperatur T vj max maximum junction temperature Betriebstemperatur T -40...+125 C c op operating temperature Lagertemperatur T -40...+130 C stg storage temperature Mechanische Eigenschaften / Mechanical properties Mechanische Eigenschaften Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Si-pellet with pressure contact Innere Isolation AlN internal insulation Anzugsdrehmoment fr mechanische Anschlsse Toleranz / Tolerance 15% M1 6 Nm mounting torque Anzugsdrehmoment fr elektrische Anschlsse Toleranz / Tolerance 10% M2 6 Nm terminal connection torque Steueranschlsse DIN 46 244 A 2,8 x 0,8 control terminals Gewicht G typ. 310 g weight Kriechstrecke 15 mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance file-No. E 83336 Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Es gilt in Verbindung mit den zugehrigen technischen Erluterungen. This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging technical notes. BIP AC / 22 Nov , A.Rther A70 / 95 Seite/page 2/12

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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