Technische Information / technical information Net z-Thyristor-Modul TT190N18SOF Phase Control Thyristor Module Key Parameters V / V 1800 V DRM RRM I 190 A (T =85 C) TAVM C I 5200 A TSM 3570A (T =55C) C V 0,85 V T0 r 0,9 m T R 0,145 K/W thJC Base plate 34 mm Weight 165 g For type designation please refer to actual short form catalog Technische Information / technical information Netz-Thyristor-Modul TT190N18SOF Phase Control Thyristor Module TT190N18SOF TD190N18SOF Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values *1.) 1800 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = +25C... T V ,V vj vj max DRM RRM repetitive peak forward off-state and reverse voltages 1800 V Vorwrts-Stospitzensperrspannung T = +25C... T V vj vj max DSM non-repetitive peak forward off-state voltage 1900 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM non-repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert I 275 A TRMSM maximum RMS on-state current Dauergrenzstrom I 190 A T = 85C TAVM C average on-state current Stostrom-Grenzwert T = 25C, t = 10ms I 5200 A vj P TSM surge current T = T , t = 10ms 4500 A vj vj max P Grenzlastintegral T = 25C, t = 10ms It 135200 As vj P 101250 It-value T = T , t = 10ms As vj vj max P Kritische Stromsteilheit DIN IEC 747-6 (di /dt) 100 A/s T cr critical rate of rise of on-state current f = 50Hz, i = 1A, di /dt = 1A/s GM G Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) 1000 V/s vj vj max D DRM D cr th critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values max. 1,52 V Durchlaspannung Tvj = Tvj max , iT = 500 A vT on-state voltage max. 0,85 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 0,9 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Zndstrom Tvj = 25C, vD = 12V IGT 145 mA gate trigger current max. Zndspannung T = 25C, v = 12V V 2,5 V vj D GT gate trigger voltage max. Nicht zndender Steuerstrom T = T , v = 12V I 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung Tvj = Tvj max , vD = 0,5 VDRM VGD max. 0,25 V gate non-trigger voltage Haltestrom T = 25C, v = 12V, R = 1 I max. 200 mA vj D A H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 400 mA vj D GK L latching current i = 1A, di /dt = 1A/s, t = 20s GM G g Vorwrts- und Rckwrts-Sperrstrom Tvj = Tvj max iD, iR max. 30 mA forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 2 s gd gate controlled delay time T = 25C, i = 1A, di /dt = 1A/s vj GM G *1.) Derating factor of 0,154% per K for T below 25C vj prepared by: AG Date of publication: 2017-06-14 approved by: MS Revision: 3.1 Date of Publication 2017-06-14 Revision: 3.1 Seite/page 2/11