X-On Electronics has gained recognition as a prominent supplier of TDB6HK135N16LOF Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. TDB6HK135N16LOF Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

TDB6HK135N16LOF Infineon

TDB6HK135N16LOF electronic component of Infineon
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Part No.TDB6HK135N16LOF
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 1600V 100A HF-CNTL
Datasheet: TDB6HK135N16LOF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 198.0392 ea
Line Total: USD 198.04 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 198.0392
5 : USD 195.1213
10 : USD 195.1213
25 : USD 195.1213
100 : USD 195.1087
250 : USD 185.6952

   
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RoHS - XON
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Vr - Reverse Voltage
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Output Current
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Gate Trigger Current - Igt
Holding Current Ih Max
Reverse Voltage
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We are delighted to provide the TDB6HK135N16LOF from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TDB6HK135N16LOF and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Technische Information / Technical Information Netz-Thyristor-Modul 1) NB6 TT B6C 135 N 16 (ISOPACK) Phase Control Thyristor Module Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values T = - 40C...T V , V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung vj vj max 1600 V DRM RRM repetitive peak forward off-state and reverse voltages T = - 40C...T Vorwrts-Stospitzensperrspannung vj vj max V 1600 V DSM non-repetitive peak forward off-state voltage Rckwrts-Stospitzensperrspannung T = + 25C...T V 1600 V vj vj max RSM non-repetitive peak reverse voltage I Durchlastrom-Grenzeffektivwert (pro Element) 100 A TRMSM RMS on-state current (per chip) T = 85C Ausgangsstrom I 135 A C d T = 67C output current 173 A C T = 45C, KM 11 49 A A T = 45C, KM 33 69 A A T = 35C, KM 14 (V = 45l/s) 119 A A L T = 35C, KM 33 (V = 90l/s) 139 A A L T = 25C, t = 10ms I Stostrom-Grenzwert vj p 1000 A TSM T = T , t = 10ms surge current vj vj max p 870 A T = 25C, t = 10ms Grenzlastintegral vj p It 5000 As T = T , t = 10ms It-value vj vj max p 3780 As Kritische Stromsteilheit DIN IEC 747-6 (di/dt) 120 A/s cr critical rate of rise of on-state current f = 50Hz, i = 0,6A, di /dt = 0,6A/s GM G T = T , v = 0,67 V (dv/dt) Kritische Spannungssteilheit vj vj max D DRM cr 8. Kennbuchstabe / 8th letter F critical rate of rise of off-state voltage 1000 V/s Charakteristische Werte / Characteristic values Durchlaspannung T = T , i = 150A v max. 1,81 V vj vj max T T on-state voltage T = T V Schleusenspannung vj vj max 0,95 V (TO) threshold voltage T =T Ersatzwiderstand r 4,3 m vj vj max T slope resistance Zndstrom T = 25C, v = 6V I max. 150 mA vj D GT gate trigger current T = 25C, v = 6V V Zndspannung vj D max. 2,5 V GT gate trigger voltage T = T , v = 6V Nicht zndender Steuerstrom I max. 5,0 mA vj vj max D GD gate non-trigger current T = T , v = 0,5 V max. 2,5 mA vj vj max D DRM T = T , v = 0,5 V V Nicht zndende Steuerspannung vj vj max D DRM max. 0,2 V GD gate non-trigger voltage T = 25C, v = 6V, R = 5 I Haltestrom max. 200 mA vj D A H holding current Einraststrom T = 25C, v = 6V, R 20 I max. 600 mA vj D GK L latching current i = 0,6A, di /dt = 0,6A/s, t = 10s GM G g T = T i , i Vorwrts- und Rckwrts-Sperrstrom vj vj max max. 10 mA D R v = V , v = V forward off-state and reverse currents D DRM R RRM 1) gilt auch fr / also valid for TD B6HK 135 N 16 BIP PPE4 rev. 2 21. Okt 05 A 06/05 Seite/page 1(6)Technische Information / Technical Information Netz-Thyristor-Modul TT B6C 135 N 16 (ISOPACK) NB6 Phase Control Thyristor Module Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Zndverzug DIN IEC 747-6 t max. 1,2 s gd gate controlled delay time T = 25C, i = 0,6A, di /dt = 0,6A/s vj GM G T = T , i = 50A t Freiwerdezeit vj vj max TM q v = 100V, V = 0,67 V circuit commutated turn-off time RM DM DRM d /dt = 20V/s, -di /dt = 10A/s VD T 7. Kennbuchstabe / 7th letter O typ. 190 s Isolations-Prfspannung RMS, f = 50Hz, t = 1min V 3,0 kV ISOL RMS, f = 50Hz, t = 1sec insulation test voltage 3,6 kV Thermische Eigenschaften / Thermal properties R Innerer Wrmewiderstand pro Modul / per module, = 120rect max. 0,098 C/W thJC thermal resistance, junction to case pro Element / per chip, = 120rect max. 0,590 C/W pro Modul / per module, DC max. 0,078 C/W pro Element / per chip, DC max. 0,470 C/W bergangs-Wrmewiderstand pro Modul / per module R max. 0,033 C/W thCK pro Element / per chip thermal resistance, case to heatsink max. 0,200 C/W Hchstzulssige Sperrschichttemperatur T 125 C vj max max. junction temperature Betriebstemperatur T - 40...+125 C c op operating temperature T Lagertemperatur - 40...+130 C stg storage temperature Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see appendix page 3 Si-Elemente mit Ltkontakt, glaspassiviert Si-pellets with soldered contact, glass-passivated Innere Isolation Al O 2 3 internal insulation Anzugsdrehmoment fr mechanische Befestigung Toleranz / tolerance 15% M1 6 Nm mounting torque Anzugsdrehmoment fr elektrische Anschlsse Toleranz / tolerance +5% / -10% M2 6 Nm terminal connection torque Gewicht G typ. 300 g weight Kriechstrecke 12,5 mm creepage distance Schwingfestigkeit f = 50Hz 50 m/s vibration resistance Khlkrper / heatsinks : KM 11 KM 14 KM 17 KM 33 BIP PPE4 rev. 2 21. Okt 05 Seite/page 2(6)

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8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
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Infineon IR
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Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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