Technische Information / technical information Netz-Thyristor-Modul TT170N Phase Control Thyristor Module Key Parameters V / V 1200 V 1800 V DRM RRM I 170 A (T =85 C) TAVM C I 5200 A TSM 3570A (T =55C) C V 0,95 V T0 r 1,0 m T R 0,17 K/W thJC Base plate 50 mm Weight 800 g For type designation please refer to actual short form catalog Technische Information / technical information + Net z-Thyristor-Modul TT170N Phase Control Thyristor Module TT170N TD170N Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1200 1400 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM 1600 1800 V repetitive peak forward off-state and reverse voltages 1200 1400 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM 1600 1800 V non-repetitive peak forward off-state voltage 1300 1500 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM 1700 1900 V non-repetitive peak reverse voltage 350 Durchlastrom-Grenzeffektivwert I A TRMSM maximum RMS on-state current Dauergrenzstrom I 170 A T = 85C TAVM C average on-state current 223 T = 68C C Stostrom-Grenzwert T = 25C, t = 10ms I 5200 A vj P TSM 4600 surge current T = T , t = 10ms A vj vj max P Grenzlastintegral T = 25C, t = 10ms It 135000 As vj P It-value T = T , t = 10ms 106000 As vj vj max P Kritische Stromsteilheit DIN IEC 747-6 (di /dt) 150 A/s T cr critical rate of rise of on-state current f = 50Hz, i = 1A, di /dt = 1A/s GM G Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) 1000 V/s vj vj max D DRM D cr th critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values 1,65 V Durchlaspannung T = T , i = 600 A v max. vj vj max T T on-state voltage Schleusenspannung T = T V max. 0,95 V vj vj max (TO) threshold voltage Ersatzwiderstand T = T r max. 1,0 m vj vj max T slope resistance Zndstrom T = 25C, v = 12V I max. 200 mA vj D GT gate trigger current Zndspannung T = 25C, v = 12V V max. 2,0 V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 12V I max. 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,2 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V, R = 1 I max. 300 mA vj D A H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 1200 mA vj D GK L latching current i = 1A, di /dt = 1A/s, t = 20s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 50 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 3 s gd gate controlled delay time T = 25C, i = 1A, di /dt = 1A/s vj GM G prepared by: HR date of publication: 2014-04-23 approved by: ML revision: 3.1 Seite/page Date of Publication 2014-04-23 Revision: 3.1 2/11