X-On Electronics has gained recognition as a prominent supplier of TT240N28KOF Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. TT240N28KOF Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

TT240N28KOF Infineon

TT240N28KOF electronic component of Infineon
Images are for reference only
See Product Specifications
Part No.TT240N28KOF
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Module; double series; 2.8kV; 240A; BG-PB60-1; Ufmax:3.43V; screw
Datasheet: TT240N28KOF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 443.6557
10 : USD 429.629
100 : USD 406.2976
500 : USD 405.6928
1000 : USD 405.6928
10000 : USD 405.6928
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 362.295
N/A

Obsolete
   
Manufacturer
Product Category
Case
Mounting
Semiconductor Structure
Electrical Mounting
Type Of Module
Max Forward Impulse Current
Max Forward Voltage
Max Off-State Voltage
Load Current
Gate Current
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We are delighted to provide the TT240N28KOF from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TT240N28KOF and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Datenblatt / Data sheet N Netz-Thyristor-Modul TT240N Phase Control Thyristor Module TT240N TD240N Kenndaten Elektrische Eigenschaften / Electrical properties Elektrische Eigenschaften Hchstzulssige Werte / Maximum rated values 2800 3000 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM 3200 3400 V repetitive peak forward off-state and reverse voltages 1) 3600 3800 V 2800 3000 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM 3200 3400 V non-repetitive peak forward off-state voltage 3600 3800 V 2900 3100 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM 3300 3500 V non-repetitive peak reverse voltage 3700 3900 V 700 A Durchlastrom-Grenzeffektivwert I TRMSM maximum RMS on-state current 240 A Dauergrenzstrom T = 85C I C TAVM 446 A average on-state current T = 19C C 6100 A Stostrom-Grenzwert T = 25 C, t = 10 ms I vj P TSM 5500 A surge current T = T , t = 10 ms vj vj max P 186000 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 151000 As It-value T = T , t = 10 ms vj vj max P DIN IEC 747-6 100 A/s Kritische Stromsteilheit (di /dt) T cr f = 50 Hz, i = 1 A, di /dt = 1 A/s GM G critical rate of rise of on-state current Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th 500 V/s critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter C th 1000 V/s 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values Durchlaspannung T = T , i = 1200 A v max. 3,43 V vj vj max T T on-state voltage Schleusenspannung T = T V 1,17 V vj vj max (TO) threshold voltage Ersatzwiderstand T = T r 1,7 m vj vj max T slope resistance Zndstrom T = 25C, v = 6 V I max. 250 mA vj D GT gate trigger current Zndspannung T = 25C, v = 6 V V max. 1,5 V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 6 V I max. 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,2 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 6 V, R = 5 I max. 300 mA vj D A H holding current Einraststrom T = 25C, v = 6 V, R 10 I max. 1500 mA vj D GK L latching current i = 1 A, di /dt = 1 A/s, t = 20 s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 250 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 4,5 s gd gate controlled delay time T = 25 C,i = 1 A, di /dt = 1 A/s vj GM G 1) 3800V auf Anfrage / 3800V on request C.Drilling date of publication: 29.10.02 prepared by: revision: 1 approved by: J. Novotny BIP AC / 00-11-20, K.-A. Rther A 27/00 Seite/page 1/12Datenblatt / Data sheet N Netz-Thyristor-Modul TT240N Phase Control Thyristor Module Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Freiwerdezeit T = T , i = I t vj vj max TM TAVM q circuit commutated turn-off time v = 100 V, v = 0,67 V RM DM DRM dv /dt = 20 V/s, -di /dt = 10 A/s D T th 5.Kennbuchstabe / 5 letter O typ. 350 s Isolations-Prfspannung RMS, f = 50 Hz, t = 1 min V 3,0 kV ISOL insulation test voltage RMS, f = 50 Hz, t = 1 sec kV 3,6 Thermische Eigenschaften / Thermal properties Thermische Eigenschaften pro Modul / per Module, = 180 sin R max. 0,0390 C/W Innerer Wrmewiderstand thJC pro Zweig / per arm, = 180 sin max. 0,0780 C/W thermal resistance, junction to case pro Modul / per Module, DC max. 0,0373 C/W pro Zweig / per arm, DC max. 0,0745 C/W pro Modul / per Module max. 0,01 C/W bergangs-Wrmewiderstand R thCH max. 0,02 pro Zweig / per arm C/W thermal resistance, case to heatsink 125 C Hchstzulssige Sperrschichttemperatur T vj max maximum junction temperature Betriebstemperatur T -40...+125 C c op operating temperature Lagertemperatur T -40...+130 C stg storage temperature Mechanische Eigenschaften / Mechanical properties Mechanische Eigenschaften Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Si-pellet with pressure contact Innere Isolation AlN internal insulation Anzugsdrehmoment fr mechanische Anschlsse Toleranz / Tolerance 15% M1 6 Nm mounting torque Anzugsdrehmoment fr elektrische Anschlsse Toleranz / Tolerance 10% M2 12 Nm terminal connection torque Steueranschlsse DIN 46 244 A 2,8 x 0,8 control terminals Gewicht G typ. 1500 g weight Kriechstrecke 19 mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance file-No. E 83336 Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Es gilt in Verbindung mit den zugehrigen technischen Erluterungen. This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging technical notes. BIP AC / 00-11-20, K.-A. Rther A 27/00 Seite/page 2/12

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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