TT251N16KOF Infineon

Technische Information / technical information Netz-Thyristor-Modul TT251N Phase Control Thyristor Module Key Parameters V / V 1200 1800 V DRM RRM I 250 A (T =85 C) TAVM C I 9100 A TSM 3570A (T =55C) C V 0,8 V T0 r 0,7 m T R 0,124 K/W thJC Base plate 50 mm Weight 800 g For type designation please refer to actual short form catalog Technische Information / technical information Net z-Thyristor-Modul TT251N Phase Control Thyristor Module TT251N TD251N Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1200 1400 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM 1600 1800 V repetitive peak forward off-state and reverse voltages 1200 1400 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM 1600 1800 V non-repetitive peak forward off-state voltage 1300 1500 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM 1700 1900 V non-repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert I 410 A TRMSM maximum RMS on-state current Dauergrenzstrom I 250 A T = 85C TAVM C average on-state current Stostrom-Grenzwert T = 25C, t = 10ms I 9100 A vj P TSM 8000 surge current T = T , t = 10ms A vj vj max P Grenzlastintegral T = 25C, t = 10ms It 414000 As vj P It-value T = T , t = 10ms 320000 As vj vj max P Kritische Stromsteilheit DIN IEC 747-6 (di /dt) 250 A/s T cr critical rate of rise of on-state current f = 50Hz, i = 1A, di /dt = 1A/s GM G Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F 1000 V/s Charakteristische Werte / Characteristic values max. 1,4 V Durchlaspannung T = T , i = 800 A v vj vj max T T on-state voltage max. 0,8 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 0,7 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Zndstrom T = 25C, v = 12V I 200 mA vj D GT gate trigger current max. Zndspannung T = 25C, v = 12V V 2,0 V vj D GT gate trigger voltage max. Nicht zndender Steuerstrom T = T , v = 12V I 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,2 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V, R = 1 I max. 300 mA vj D A H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 1200 mA vj D GK L latching current i = 1A, di /dt = 1A/s, t = 20s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 50 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 3 s gd gate controlled delay time T = 25C, i = 1A, di /dt = 1A/s vj GM G prepared by: HR date of publication: 2014-04-09 approved by: ML revision: 3.1 Date of Publication 2014-04-09 Revision: 3.2 Seite/page 2/10