Technische Information / technical information Netz-Thyristor-Modul TT600N16KOF Phase Control Thyristor Module Key Parameters V / V 1600 V DRM RRM I 600 A (T =85 C) TAVM C I 21000 A TSM V 0,8 V T0 r 0,23 m T R 0,055 K/W thJC Base plate 60 mm For type designation please refer to actual short form catalog Technische Information / technical information Netz-Thyristor-Modul TT600N16KOF Phase Control Thyristor Module TT600N16KOF... TD600N16KOF... Kenndaten Elektrische Eigenschaften / Electrical properties Elektrische Eigenschaften Hchstzulssige Werte / Maximum rated values 1600 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM repetitive peak forward off-state and reverse voltages 1600 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM non-repetitive peak forward off-state voltage 1700 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM non-repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert I 1050 A TRMSM maximum RMS on-state current Dauergrenzstrom T = 85C I 600 A C TAVM average on-state current Stostrom-Grenzwert T = 25 C, t = 10 ms I 21.000 A vj P TSM 17.500 A surge current T = T , t = 10 ms vj vj max P Grenzlastintegral T = 25 C, t = 10 ms It 2.205.000 As vj P 1.531.250 As It-value T = T , t = 10 ms vj vj max P Kritische Stromsteilheit DIN IEC 747-6 (di /dt) 200 A/s T cr f = 50 Hz, iGM = 1 A, diG/dt = 1 A/s critical rate of rise of on-state current Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th 1000 V/s critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values max. 1,27 V Durchlaspannung T = T , i = 1500 A v vj vj max T T on-state voltage max. 0,8 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 0,23 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Zndstrom T = 25C, v = 12 V I 250 mA vj D GT gate trigger current max. Zndspannung T = 25C, v = 12 V V 2 V vj D GT gate trigger voltage max. Nicht zndender Steuerstrom T = T , v = 12 V I 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,25 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12 V, R = 1 I max. 300 mA vj D A H holding current Einraststrom T = 25C, v = 12 V, R 10 I max. 1500 mA vj D GK L latching current i = 1 A, di /dt = 1 A/s, t = 20 s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 100 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 4 s gd gate controlled delay time T = 25 C,i = 1 A, di /dt = 1 A/s vj GM G prepared by: CD date of publication: 14.10.14 approved by: MS revision: 3.2 Date of Publication 2014-10-14 Revision: 3.2 Seite/page 2/11