X-On Electronics has gained recognition as a prominent supplier of TT61N12KOF Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. TT61N12KOF Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

TT61N12KOF Infineon

TT61N12KOF electronic component of Infineon
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Part No.TT61N12KOF
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 1200V 61A DUAL
Datasheet: TT61N12KOF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 112.489
5 : USD 110.409
10 : USD 108.433
25 : USD 104.819
100 : USD 103.272
250 : USD 98.28
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
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Product
Type
Vr - Reverse Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Configuration
Operating Temperature
Output Current
Brand
Gate Trigger Current - Igt
Holding Current Ih Max
Reverse Voltage
Typical Delay Time
Factory Pack Quantity :
Cnhts
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We are delighted to provide the TT61N12KOF from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TT61N12KOF and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Datenblatt / Data sheet N Netz-Thyristor-Modul TT61N Phase Control Thyristor Module TT61N TD61N DT61N TT61N...-K TD61N...-A DT61N...-K 5555Kenndaten Elektrische Eigenschaften / Electrical properties Elektrische Eigenschaften Hchstzulssige Werte / Maximum rated values 1200 1400 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM 1600 V repetitive peak forward off-state and reverse voltages 1200 1400 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM 1600 V non-repetitive peak forward off-state voltage 1300 1500 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM 1700 V non-repetitive peak reverse voltage 120 A Durchlastrom-Grenzeffektivwert I TRMSM maximum RMS on-state current 60 A Dauergrenzstrom T = 85C I C TAVM 76 A average on-state current T = 76c C 1550 A Stostrom-Grenzwert T = 25 C, t = 10 ms I vj P TSM 1400 A surge current T = T , t = 10 ms vj vj max P 12000 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 9800 As It-value T = T , t = 10 ms vj vj max P DIN IEC 747-6 150 A/s Kritische Stromsteilheit (di /dt) T cr f = 50 Hz, i = 1 A, di /dt = 1 A/s GM G critical rate of rise of on-state current Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th 1000 V/s critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values Durchlaspannung T = T , i = 300 A v max. 1,9 V vj vj max T T on-state voltage Schleusenspannung T = T V 0,8 V vj vj max (TO) threshold voltage Ersatzwiderstand T = T r 3,4 m vj vj max T slope resistance Zndstrom T = 25C, v = 6 V I max. 120 mA vj D GT gate trigger current Zndspannung T = 25C, v = 6 V V max. 1,4 V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 6 V I max. 5,0 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 2,5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,2 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 6 V, R = 5 I max. 200 mA vj D A H holding current Einraststrom T = 25C, v = 6 V, R 10 I max. 620 mA vj D GK L latching current i = 1 A, di /dt = 1 A/s, t = 20 s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 20 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 3 s gd gate controlled delay time T = 25 C,i = 1 A, di /dt = 1 A/s vj GM G C.Drilling date of publication: 09.07.02 prepared by: revision: 3 approved by: J. Novotny A 05/02 Seite/page 1/2 BIP AC/ 16.05.2002 DrillingDatenblatt / Data sheet N Netz-Thyristor-Modul TT61N Phase Control Thyristor Module Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Freiwerdezeit T = T , i = I t vj vj max TM TAVM q circuit commutated turn-off time v = 100 V, v = 0,67 V RM DM DRM dv /dt = 20 V/s, -di /dt = 10 A/s D T th 5.Kennbuchstabe / 5 letter O typ. 120 s Isolations-Prfspannung RMS, f = 50 Hz, t = 1 min V 2,5 kV ISOL insulation test voltage RMS, f = 50 Hz, t = 1 sec kV 3,0 Thermische Eigenschaften / Thermal properties Thermische Eigenschaften pro Modul / per Module, = 180 sin R max. 0,26 C/W Innerer Wrmewiderstand thJC pro Zweig / per arm, = 180 sin max. 0,52 C/W thermal resistance, junction to case pro Modul / per Module, DC max. 0,25 C/W pro Zweig / per arm, DC max. 0,50 C/W pro Modul / per Module max. 0,08 C/W bergangs-Wrmewiderstand R thCH max. 0,16 pro Zweig / per arm C/W thermal resistance, case to heatsink 125 C Hchstzulssige Sperrschichttemperatur T vj max maximum junction temperature Betriebstemperatur T -40...+125 C c op operating temperature Lagertemperatur T -40...+130 C stg storage temperature Mechanische Eigenschaften / Mechanical properties Mechanische Eigenschaften Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Si-pellet with pressure contact Innere Isolation AlN internal insulation Anzugsdrehmoment fr mechanische Anschlsse Toleranz / Tolerance 15% M1 4 Nm mounting torque Anzugsdrehmoment fr elektrische Anschlsse Toleranz / Tolerance 10% M2 4 Nm terminal connection torque Steueranschlsse DIN 46 244 A 2,8 x 0,8 control terminals Gewicht G typ. 160 g weight Kriechstrecke 12,5 mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance UL-gelistet file-No. E 83336 UL listed Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Es gilt in Verbindung mit den zugehrigen technischen Erluterungen. This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging technical notes. A 05/02 Seite/page 2/2 BIP AC/ 16.05.2002 Drilling

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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